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Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5phase change memory

Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5phase change memory
Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5phase change memory
We report a new method for electrodeposition of device-quality metal chalcogenide semiconductor thin films and nanostructures from a single, highly tuneable, non-aqueous electrolyte. This method opens up the prospect of electrochemical preparation of a wide range of functional semiconducting metal chalcogenide alloys that have applications in various nano-technology areas, ranging from the electronics industry to thermoelectric devices and photovoltaic materials. The functional operation of the new method is demonstrated by means of its application to deposit the technologically important ternary Ge/Sb/Te alloy, GST-225, for fabrication of nanostructured phase change memory (PCM) devices and the quality of the material is confirmed by phase cycling via electrical pulsed switching of both the nano-cells and thin films.
420-426
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
Benjamin, Sophie L.
3efd7555-c2e0-4330-a289-681bd13700df
de Groot, C.H. (Kees)
92cd2e02-fcc4-43da-8816-c86f966be90c
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Jolleys, Andrew
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Kissling, Gabriela
b9ad7a6b-70b9-48b6-ac03-a189278dd2d9
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Pearce, Stuart J.
ff0073af-0638-4b6f-aa9f-e623a36d3159
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Wang, Yudong
c48bcc7c-4cb4-468c-af4e-d1e601222009
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
Benjamin, Sophie L.
3efd7555-c2e0-4330-a289-681bd13700df
de Groot, C.H. (Kees)
92cd2e02-fcc4-43da-8816-c86f966be90c
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Jolleys, Andrew
29e25ac4-2ff1-4267-8278-a433a94d5c6f
Kissling, Gabriela
b9ad7a6b-70b9-48b6-ac03-a189278dd2d9
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Pearce, Stuart J.
ff0073af-0638-4b6f-aa9f-e623a36d3159
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Wang, Yudong
c48bcc7c-4cb4-468c-af4e-d1e601222009

Bartlett, Philip N., Benjamin, Sophie L., de Groot, C.H. (Kees), Hector, Andrew L., Huang, Ruomeng, Jolleys, Andrew, Kissling, Gabriela, Levason, William, Pearce, Stuart J., Reid, Gillian and Wang, Yudong (2015) Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5phase change memory. Materials Horizons, 2 (4), 420-426. (doi:10.1039/C5MH00030K).

Record type: Article

Abstract

We report a new method for electrodeposition of device-quality metal chalcogenide semiconductor thin films and nanostructures from a single, highly tuneable, non-aqueous electrolyte. This method opens up the prospect of electrochemical preparation of a wide range of functional semiconducting metal chalcogenide alloys that have applications in various nano-technology areas, ranging from the electronics industry to thermoelectric devices and photovoltaic materials. The functional operation of the new method is demonstrated by means of its application to deposit the technologically important ternary Ge/Sb/Te alloy, GST-225, for fabrication of nanostructured phase change memory (PCM) devices and the quality of the material is confirmed by phase cycling via electrical pulsed switching of both the nano-cells and thin films.

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Accepted/In Press date: 1 April 2015
e-pub ahead of print date: 1 April 2015
Published date: 1 July 2015
Organisations: Chemistry, Electronics & Computer Science, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 378989
URI: https://eprints.soton.ac.uk/id/eprint/378989
PURE UUID: 985fce73-9a64-42df-a7d0-49a55fc9a215
ORCID for Philip N. Bartlett: ORCID iD orcid.org/0000-0002-7300-6900
ORCID for C.H. (Kees) de Groot: ORCID iD orcid.org/0000-0002-3850-7101
ORCID for Andrew L. Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for Gabriela Kissling: ORCID iD orcid.org/0000-0003-4701-7160
ORCID for William Levason: ORCID iD orcid.org/0000-0003-3540-0971
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468

Catalogue record

Date deposited: 13 Jul 2015 10:31
Last modified: 14 Jul 2018 00:37

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Contributors

Author: Sophie L. Benjamin
Author: Ruomeng Huang
Author: Andrew Jolleys
Author: William Levason ORCID iD
Author: Stuart J. Pearce
Author: Gillian Reid ORCID iD
Author: Yudong Wang

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