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Confined nanoscale chalcogenide phase change material and memory

Confined nanoscale chalcogenide phase change material and memory
Confined nanoscale chalcogenide phase change material and memory
The miniaturization of memory devices has been one of the major driving forces in the exploration of ever faster, smaller and more efficient memory concepts. Among all the competitors for the next generation of non-volatile memory, phase change materials based random access memory has emerged as a leading candidate. A better understanding of nanoscale properties of phase change materials and the ability of selective depositing them into confined nanostructures are substantially important in the long march towards smaller more densely packed memory bits.

A novel top-down spacer etch technique has been developed for fabricating sub hundred nanometre phase change Ge2Sb2Te5 nanowires. Taking advantage of this technique which allows precise control over nanowire position and geometries, the contact properties between phase change material and metallic electrode in nanoscale can be quantitatively investigated. The results reveal a specific contact resistance of 7.56 x 10-5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c

Huang, Ruomeng (2015) Confined nanoscale chalcogenide phase change material and memory. University of Southampton, Physical Sciences and Engineering, Doctoral Thesis, 181pp.

Record type: Thesis (Doctoral)

Abstract

The miniaturization of memory devices has been one of the major driving forces in the exploration of ever faster, smaller and more efficient memory concepts. Among all the competitors for the next generation of non-volatile memory, phase change materials based random access memory has emerged as a leading candidate. A better understanding of nanoscale properties of phase change materials and the ability of selective depositing them into confined nanostructures are substantially important in the long march towards smaller more densely packed memory bits.

A novel top-down spacer etch technique has been developed for fabricating sub hundred nanometre phase change Ge2Sb2Te5 nanowires. Taking advantage of this technique which allows precise control over nanowire position and geometries, the contact properties between phase change material and metallic electrode in nanoscale can be quantitatively investigated. The results reveal a specific contact resistance of 7.56 x 10-5

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More information

Published date: January 2015
Organisations: University of Southampton, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 379321
URI: http://eprints.soton.ac.uk/id/eprint/379321
PURE UUID: bf398b6d-361a-4d62-bf35-5c557e699ef4
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 22 Jul 2015 10:30
Last modified: 12 Dec 2021 05:30

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Contributors

Author: Ruomeng Huang
Thesis advisor: C.H. de Groot ORCID iD

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