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High performance silicon optical modulators

High performance silicon optical modulators
High performance silicon optical modulators
In this work we present results from high performance silicon optical modulators produced within the two largest silicon photonics projects in Europe; UK Silicon Photonics (UKSP) and HELIOS. Two conventional MZI based optical modulators featuring novel self-aligned fabrication processes are presented. The first is based in 400nm overlayer SOI and demonstrates 40Gbit/s modulation with the same extinction ratio for both TE and TM polarisations, which relaxes coupling requirements to the device. The second design is based in 220nm SOI and demonstrates 40Gbits/s modulation with a 10dB extinction ratio as well modulation at 50Gbit/s for the first time. A ring resonator based optical modulator, featuring FIB error correction is presented. 40Gbit/s, 32fJ/bit operation is also shown from this device which has a 6µm radius. Further to this slow light enhancement of the modulation effect is demonstrated through the use of both convention photonic crystal structures and corrugated waveguides. Fabricated conventional photonic crystal modulators have shown an enhancement factor of 8 over the fast light case. The corrugated waveguide device shows modulation efficiency down to 0.45V.cm compared to 2.2V.cm in the fast light case. 40Gbit/s modulation is demonstrated with a 3dB modulation depth from this device. Novel photonic crystal based cavity modulators are also demonstrated which offer the potential for low fibre to fibre loss. In this case preliminary modulation results at 1Gbit/s are demonstrated. Ge/SiGe Stark effect devices operating at 1300nm are presented. Finally an integrated transmitter featuring a III-V source and MZI modulator operating at 10Gbit/s is presented.
Reed, G.T.
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Thomson, D.J.
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Gardes, F.Y.
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Hu, Y.
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Owens, N.
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Debnath, Kapil
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O'Faolain, L.
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Krauss, T.F.
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Lever, L.
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Ikonić, Z.
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Kelsall, R.W.
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Myronov, M.
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Leadley, D.R.
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Marko, I.P.
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Sweeney, S.J.
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Cox, D.C.
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Brimont, A.
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Sanchis, P.
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Duan, G.-H.
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Le Liepvre, A.
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Jany, C.
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Lamponi, M.
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Make, D.
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Lelarge, F.
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Fédéli, J-M.
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Messaoudene, S.
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Keyvaninia, S.
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Roelkens, G.
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Van Thourhout, D.
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Liu, S.
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Yang, X.
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Petropoulos, P.
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Reed, G.T.
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Thomson, D.J.
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Gardes, F.Y.
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Hu, Y.
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Owens, N.
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Debnath, Kapil
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O'Faolain, L.
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Krauss, T.F.
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Lever, L.
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Ikonić, Z.
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Kelsall, R.W.
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Myronov, M.
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Leadley, D.R.
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Marko, I.P.
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Sweeney, S.J.
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Cox, D.C.
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Brimont, A.
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Sanchis, P.
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Duan, G.-H.
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Le Liepvre, A.
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Jany, C.
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Lamponi, M.
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Make, D.
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Lelarge, F.
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Fédéli, J-M.
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Messaoudene, S.
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Keyvaninia, S.
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Roelkens, G.
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Van Thourhout, D.
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Liu, S.
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Yang, X.
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Petropoulos, P.
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Reed, G.T., Thomson, D.J., Gardes, F.Y., Hu, Y., Owens, N., Debnath, Kapil, O'Faolain, L., Krauss, T.F., Lever, L., Ikonić, Z., Kelsall, R.W., Myronov, M., Leadley, D.R., Marko, I.P., Sweeney, S.J., Cox, D.C., Brimont, A., Sanchis, P., Duan, G.-H., Le Liepvre, A., Jany, C., Lamponi, M., Make, D., Lelarge, F., Fédéli, J-M., Messaoudene, S., Keyvaninia, S., Roelkens, G., Van Thourhout, D., Liu, S., Yang, X. and Petropoulos, P. (2012) High performance silicon optical modulators. Conference on Nanophotonics and Micro/Nano Optics (SPIE; Chinese Opt Soc (COS)), Beijing, China. 05 - 09 Nov 2012.

Record type: Conference or Workshop Item (Paper)

Abstract

In this work we present results from high performance silicon optical modulators produced within the two largest silicon photonics projects in Europe; UK Silicon Photonics (UKSP) and HELIOS. Two conventional MZI based optical modulators featuring novel self-aligned fabrication processes are presented. The first is based in 400nm overlayer SOI and demonstrates 40Gbit/s modulation with the same extinction ratio for both TE and TM polarisations, which relaxes coupling requirements to the device. The second design is based in 220nm SOI and demonstrates 40Gbits/s modulation with a 10dB extinction ratio as well modulation at 50Gbit/s for the first time. A ring resonator based optical modulator, featuring FIB error correction is presented. 40Gbit/s, 32fJ/bit operation is also shown from this device which has a 6µm radius. Further to this slow light enhancement of the modulation effect is demonstrated through the use of both convention photonic crystal structures and corrugated waveguides. Fabricated conventional photonic crystal modulators have shown an enhancement factor of 8 over the fast light case. The corrugated waveguide device shows modulation efficiency down to 0.45V.cm compared to 2.2V.cm in the fast light case. 40Gbit/s modulation is demonstrated with a 3dB modulation depth from this device. Novel photonic crystal based cavity modulators are also demonstrated which offer the potential for low fibre to fibre loss. In this case preliminary modulation results at 1Gbit/s are demonstrated. Ge/SiGe Stark effect devices operating at 1300nm are presented. Finally an integrated transmitter featuring a III-V source and MZI modulator operating at 10Gbit/s is presented.

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More information

Published date: 2012
Venue - Dates: Conference on Nanophotonics and Micro/Nano Optics (SPIE; Chinese Opt Soc (COS)), Beijing, China, 2012-11-05 - 2012-11-09
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 379408
URI: https://eprints.soton.ac.uk/id/eprint/379408
PURE UUID: c46e0a6b-ab1d-44ca-a130-eca6143e663d
ORCID for P. Petropoulos: ORCID iD orcid.org/0000-0002-1576-8034

Catalogue record

Date deposited: 21 Jul 2015 13:19
Last modified: 20 Jul 2019 01:13

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Contributors

Author: G.T. Reed
Author: D.J. Thomson
Author: F.Y. Gardes
Author: Y. Hu
Author: N. Owens
Author: Kapil Debnath
Author: L. O'Faolain
Author: T.F. Krauss
Author: L. Lever
Author: Z. Ikonić
Author: R.W. Kelsall
Author: M. Myronov
Author: D.R. Leadley
Author: I.P. Marko
Author: S.J. Sweeney
Author: D.C. Cox
Author: A. Brimont
Author: P. Sanchis
Author: G.-H. Duan
Author: A. Le Liepvre
Author: C. Jany
Author: M. Lamponi
Author: D. Make
Author: F. Lelarge
Author: J-M. Fédéli
Author: S. Messaoudene
Author: S. Keyvaninia
Author: G. Roelkens
Author: D. Van Thourhout
Author: S. Liu
Author: X. Yang
Author: P. Petropoulos ORCID iD

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