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Telecommunications beyond silicon: one atom thick chalcogenide photodiodes

Telecommunications beyond silicon: one atom thick chalcogenide photodiodes
Telecommunications beyond silicon: one atom thick chalcogenide photodiodes
One atom thick, two dimensional materials exhibit remarkable properties and are strong contenders to lead the way to the post silicon era. Graphene, the first two dimensional material has carrier mobility up to 200,000 cm2/(V.s) *[1]. This makes it a perfect candidate for high frequency electronic devices. However the lack of a bandgap limits it use for future optoelectronic fast devices. Two dimensional transition metal chalcogenides (TMDCs) are semiconductors of the type MX2 where M is a transition metal and X a chalcogen atom, such as sulphur, selenium or tellurium[2][3]. In electronic applications, this group of 2D materials has the potential to outperform silicon and more importantly even graphene. When going from bulk to two dimensions, TMDCs also exhibit a direct band gap allowing for switching current ratios up to 108 [4]. Remarkably, this band gap can be fine-tuned simply by changing the number of the atomic layers giving unprecedented device versatility.[5]

We demonstrate promising results on atomically thin, one layer and multi-layer MoS2 (molybdenum disulphide) based photo transistors with high responsivity and high on/off current ratio.

* (Note units error in published version.)
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Aspiotis, N.
b32d40f9-0496-464e-bfcc-217f57ca9dc3
Hewak, D.
87c80070-c101-4f7a-914f-4cc3131e3db0
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Aspiotis, N.
b32d40f9-0496-464e-bfcc-217f57ca9dc3
Hewak, D.
87c80070-c101-4f7a-914f-4cc3131e3db0

Huang, C.C., Aspiotis, N. and Hewak, D. (2015) Telecommunications beyond silicon: one atom thick chalcogenide photodiodes. Royal Society Meeting: Communication Networks Beyond the Capacity Crunch – Further Discussion, United Kingdom. 13 - 14 May 2015. 1 pp .

Record type: Conference or Workshop Item (Paper)

Abstract

One atom thick, two dimensional materials exhibit remarkable properties and are strong contenders to lead the way to the post silicon era. Graphene, the first two dimensional material has carrier mobility up to 200,000 cm2/(V.s) *[1]. This makes it a perfect candidate for high frequency electronic devices. However the lack of a bandgap limits it use for future optoelectronic fast devices. Two dimensional transition metal chalcogenides (TMDCs) are semiconductors of the type MX2 where M is a transition metal and X a chalcogen atom, such as sulphur, selenium or tellurium[2][3]. In electronic applications, this group of 2D materials has the potential to outperform silicon and more importantly even graphene. When going from bulk to two dimensions, TMDCs also exhibit a direct band gap allowing for switching current ratios up to 108 [4]. Remarkably, this band gap can be fine-tuned simply by changing the number of the atomic layers giving unprecedented device versatility.[5]

We demonstrate promising results on atomically thin, one layer and multi-layer MoS2 (molybdenum disulphide) based photo transistors with high responsivity and high on/off current ratio.

* (Note units error in published version.)

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Published date: May 2015
Venue - Dates: Royal Society Meeting: Communication Networks Beyond the Capacity Crunch – Further Discussion, United Kingdom, 2015-05-13 - 2015-05-14
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 379464
URI: https://eprints.soton.ac.uk/id/eprint/379464
PURE UUID: d7d51617-fedb-4129-8898-ad57bf579d7c
ORCID for C.C. Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for D. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 21 Jul 2015 13:09
Last modified: 12 Jun 2018 00:36

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