CVD-grown tin sulphide for thin film solar cell devices
CVD-grown tin sulphide for thin film solar cell devices
Chalcogenide materials are emerging as leading thin film photovoltaic (PV) technology. Tin mono-sulphide, a p-type semiconductor with a band gap of ~1.3 eV, has attracted great interest for the use as an absorber layer in chalcogenide thin film solar cells due to its desirable properties as an absorber layer in scalable, inexpensive, and non-toxic solar cells. In this work thin films of tin sulphide have been deposited by chemical vapour deposition (CVD) at room temperature onto soda-lime substrates then annealed at five different temperatures 200, 250, 350, 400 and 450°C with the aim of optimizing the properties of the thin films to achieve the required phase for use in solar cell device structures. These annealed CVD-grown tin sulphide thin films were further characterized with SEM, EDX, XRD, Raman and UV-VIS-NIR spectroscopy. The preliminary results of these tin sulphide thin films show great promise for PV applications.
Alzaidy, G.
2d39b828-3eb4-4d96-85e6-d436a2b71435
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
April 2015
Alzaidy, G.
2d39b828-3eb4-4d96-85e6-d436a2b71435
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Alzaidy, G., Huang, C.C. and Hewak, D.W.
(2015)
CVD-grown tin sulphide for thin film solar cell devices.
11th Photovoltaic Science Applications and Technology Conference (PVSAT-11), Leeds, United Kingdom.
15 - 17 Apr 2015.
4 pp
.
Record type:
Conference or Workshop Item
(Poster)
Abstract
Chalcogenide materials are emerging as leading thin film photovoltaic (PV) technology. Tin mono-sulphide, a p-type semiconductor with a band gap of ~1.3 eV, has attracted great interest for the use as an absorber layer in chalcogenide thin film solar cells due to its desirable properties as an absorber layer in scalable, inexpensive, and non-toxic solar cells. In this work thin films of tin sulphide have been deposited by chemical vapour deposition (CVD) at room temperature onto soda-lime substrates then annealed at five different temperatures 200, 250, 350, 400 and 450°C with the aim of optimizing the properties of the thin films to achieve the required phase for use in solar cell device structures. These annealed CVD-grown tin sulphide thin films were further characterized with SEM, EDX, XRD, Raman and UV-VIS-NIR spectroscopy. The preliminary results of these tin sulphide thin films show great promise for PV applications.
More information
Published date: April 2015
Venue - Dates:
11th Photovoltaic Science Applications and Technology Conference (PVSAT-11), Leeds, United Kingdom, 2015-04-15 - 2015-04-17
Organisations:
Optoelectronics Research Centre
Identifiers
Local EPrints ID: 379583
URI: http://eprints.soton.ac.uk/id/eprint/379583
PURE UUID: 8e28350a-6d1a-433f-bade-9fc019ef96b4
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Date deposited: 24 Jul 2015 10:38
Last modified: 15 Mar 2024 03:23
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Contributors
Author:
G. Alzaidy
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