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Transfer-last suspended graphene fabrication on gold, graphite and silicon nanostructures

Transfer-last suspended graphene fabrication on gold, graphite and silicon nanostructures
Transfer-last suspended graphene fabrication on gold, graphite and silicon nanostructures
While most graphene devices fabricated so far have been by transferring graphene onto flat substrates first, an interesting approach would be to transfer graphene onto patterned substrates to suspend graphene for future graphene nanoelectromechanical device applications. This novel "transfer-last" fabrication is beneficial for reducing possible damage of the suspended graphene caused by subsequent undercutting processes and typical substrate interactions. On the other hand, reduction of contact resistance between graphene and various electrodes, and possible integration with silicon technology are the issues to be investigated. This work focuses on developing the technique to transfer graphene on patterned nanostructures made of gold, nanocrystalline graphite (NCG) and silicon.
Reynolds, J.
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Boodhoo, L.
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Huang, C.C.
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Hewak, D.W.
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Saito, S.
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Tsuchiya, Y.
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Mizuta, H.
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Reynolds, J.
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Boodhoo, L.
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Huang, C.C.
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Hewak, D.W.
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Saito, S.
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Tsuchiya, Y.
5e34980d-9e33-4a73-b3be-e8fe2ca71336
Mizuta, H.
c03e841e-f9cf-4f99-99a0-2a9261fb1345

Reynolds, J., Boodhoo, L., Huang, C.C., Hewak, D.W., Saito, S., Tsuchiya, Y. and Mizuta, H. (2015) Transfer-last suspended graphene fabrication on gold, graphite and silicon nanostructures. Graphene week, Manchester, United Kingdom. 22 - 26 Jun 2015. 1 pp .

Record type: Conference or Workshop Item (Paper)

Abstract

While most graphene devices fabricated so far have been by transferring graphene onto flat substrates first, an interesting approach would be to transfer graphene onto patterned substrates to suspend graphene for future graphene nanoelectromechanical device applications. This novel "transfer-last" fabrication is beneficial for reducing possible damage of the suspended graphene caused by subsequent undercutting processes and typical substrate interactions. On the other hand, reduction of contact resistance between graphene and various electrodes, and possible integration with silicon technology are the issues to be investigated. This work focuses on developing the technique to transfer graphene on patterned nanostructures made of gold, nanocrystalline graphite (NCG) and silicon.

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Published date: June 2015
Venue - Dates: Graphene week, Manchester, United Kingdom, 2015-06-22 - 2015-06-26
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 379624
URI: https://eprints.soton.ac.uk/id/eprint/379624
PURE UUID: 7acbca67-aec0-409f-b801-622002df01b7
ORCID for C.C. Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 30 Jul 2015 13:11
Last modified: 20 Nov 2018 01:36

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Contributors

Author: J. Reynolds
Author: L. Boodhoo
Author: C.C. Huang ORCID iD
Author: D.W. Hewak ORCID iD
Author: S. Saito
Author: Y. Tsuchiya
Author: H. Mizuta

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