Integrated optical platform for photon-number resolving telecom-band detectors for photonic information processing
Integrated optical platform for photon-number resolving telecom-band detectors for photonic information processing
We report the development of the optical substrates for the demonstration of an integrated photon-number-resolving detector, operating in the telecom band at 1550 nm, employing an evanescently coupled design that allows it to be placed at arbitrary locations within a planar circuit. Up to five photons are resolved in the guided optical mode via absorption from the evanescent field into a tungsten transition-edge sensor. The detection efficiency is 7.2 ± 0.5%. The polarization sensitivity of the detector is also demonstrated.
Gates, J.C.
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Mennea, Paolo
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Smith, P.G.R.
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Thomas-Peter, N.
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Metcalf, B.J.
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Spring, J.B.
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Langford, N.K.
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Walmsley, I.A.
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Gerrits, T.
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Lita, A.E.
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Calkins, B.
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Tomlin, N.A.
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Fox, A.E.
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Lamas-Linares, A.
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Mirin, R.P.
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Nam, S.W.
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2012
Gates, J.C.
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Mennea, Paolo
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Smith, P.G.R.
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Thomas-Peter, N.
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Metcalf, B.J.
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Spring, J.B.
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Langford, N.K.
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Walmsley, I.A.
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Gerrits, T.
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Lita, A.E.
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Calkins, B.
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Tomlin, N.A.
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Fox, A.E.
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Lamas-Linares, A.
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Mirin, R.P.
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Nam, S.W.
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Gates, J.C., Mennea, Paolo, Smith, P.G.R., Thomas-Peter, N., Metcalf, B.J., Spring, J.B., Langford, N.K., Walmsley, I.A., Gerrits, T., Lita, A.E., Calkins, B., Tomlin, N.A., Fox, A.E., Lamas-Linares, A., Mirin, R.P. and Nam, S.W.
(2012)
Integrated optical platform for photon-number resolving telecom-band detectors for photonic information processing.
European Conference on Integrated Optics (ECIO), Sitges Barcelona, Sitges, Spain.
18 - 24 Apr 2012.
Record type:
Conference or Workshop Item
(Poster)
Abstract
We report the development of the optical substrates for the demonstration of an integrated photon-number-resolving detector, operating in the telecom band at 1550 nm, employing an evanescently coupled design that allows it to be placed at arbitrary locations within a planar circuit. Up to five photons are resolved in the guided optical mode via absorption from the evanescent field into a tungsten transition-edge sensor. The detection efficiency is 7.2 ± 0.5%. The polarization sensitivity of the detector is also demonstrated.
More information
Published date: 2012
Venue - Dates:
European Conference on Integrated Optics (ECIO), Sitges Barcelona, Sitges, Spain, 2012-04-18 - 2012-04-24
Organisations:
Optoelectronics Research Centre
Identifiers
Local EPrints ID: 379676
URI: http://eprints.soton.ac.uk/id/eprint/379676
PURE UUID: f1112bcd-4361-4264-892e-14aeb7f02a1a
Catalogue record
Date deposited: 30 Jul 2015 10:36
Last modified: 15 Mar 2024 03:08
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Contributors
Author:
N. Thomas-Peter
Author:
B.J. Metcalf
Author:
J.B. Spring
Author:
N.K. Langford
Author:
I.A. Walmsley
Author:
T. Gerrits
Author:
A.E. Lita
Author:
B. Calkins
Author:
N.A. Tomlin
Author:
A.E. Fox
Author:
A. Lamas-Linares
Author:
R.P. Mirin
Author:
S.W. Nam
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