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Mid-infrared GeTe4 waveguides on silicon with a ZnSe isolation layer

Mid-infrared GeTe4 waveguides on silicon with a ZnSe isolation layer
Mid-infrared GeTe4 waveguides on silicon with a ZnSe isolation layer
GeTe4 waveguides were designed and fabricated on silicon substrates with a ZnSe isolation layer. GeTe4 has a refractive index of 3.25 at a wavelength of 9 µm and a lower refractive index isolation layer is needed to realise waveguides on silicon. Numerical modelling was carried out to calculate the thickness of the isolation layer (ZnSe, refractive index ~2.4) required to achieve low loss waveguides. For a loss between 0.1 and 1.0 dB/cm it was found that a ~4 µm thick ZnSe film is required at a wavelength of 9 µm. ZnSe thin films were deposited on silicon, GeTe4 waveguides were fabricated by lift-off technique and were characterised for mid-infrared waveguiding.
mid-infrared, waveguides, quantum cascade laser
University of Southampton
Mittal, Vinita
4d50c622-d34d-4ae5-bdba-4b247a47b91c
Craig, Christopher
2328b42b-552e-4a82-941d-45449e952f10
Sessions, Neil
ee737092-56b4-403e-a2f9-764e07e42625
Hewak, Daniel
87c80070-c101-4f7a-914f-4cc3131e3db0
Wilkinson, James
73483cf3-d9f2-4688-9b09-1c84257884ca
Murugan, Ganapathy S.
f26cdb8d-e935-4a0a-bd1e-1885b7045441
Mittal, Vinita
4d50c622-d34d-4ae5-bdba-4b247a47b91c
Craig, Christopher
2328b42b-552e-4a82-941d-45449e952f10
Sessions, Neil
ee737092-56b4-403e-a2f9-764e07e42625
Hewak, Daniel
87c80070-c101-4f7a-914f-4cc3131e3db0
Wilkinson, James
73483cf3-d9f2-4688-9b09-1c84257884ca
Murugan, Ganapathy S.
f26cdb8d-e935-4a0a-bd1e-1885b7045441

Mittal, Vinita, Craig, Christopher, Sessions, Neil, Hewak, Daniel, Wilkinson, James and Murugan, Ganapathy S. (2015) Mid-infrared GeTe4 waveguides on silicon with a ZnSe isolation layer. University of Southampton [Dataset]

Record type: Dataset

Abstract

GeTe4 waveguides were designed and fabricated on silicon substrates with a ZnSe isolation layer. GeTe4 has a refractive index of 3.25 at a wavelength of 9 µm and a lower refractive index isolation layer is needed to realise waveguides on silicon. Numerical modelling was carried out to calculate the thickness of the isolation layer (ZnSe, refractive index ~2.4) required to achieve low loss waveguides. For a loss between 0.1 and 1.0 dB/cm it was found that a ~4 µm thick ZnSe film is required at a wavelength of 9 µm. ZnSe thin films were deposited on silicon, GeTe4 waveguides were fabricated by lift-off technique and were characterised for mid-infrared waveguiding.

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More information

Published date: 2015
Keywords: mid-infrared, waveguides, quantum cascade laser
Organisations: Optoelectronics Research Centre, Technical Support Staff, Faculty of Physical Sciences and Engineering, Photonic Systems Circuits & Sensors

Identifiers

Local EPrints ID: 379693
URI: https://eprints.soton.ac.uk/id/eprint/379693
PURE UUID: 2083a84f-dfe2-472a-9b74-034037f24a4f
ORCID for Vinita Mittal: ORCID iD orcid.org/0000-0003-4836-5327
ORCID for Christopher Craig: ORCID iD orcid.org/0000-0001-6919-4294
ORCID for Daniel Hewak: ORCID iD orcid.org/0000-0002-2093-5773
ORCID for James Wilkinson: ORCID iD orcid.org/0000-0003-4712-1697

Catalogue record

Date deposited: 28 Jul 2015 11:58
Last modified: 24 May 2019 00:32

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Contributors

Creator: Vinita Mittal ORCID iD
Creator: Christopher Craig ORCID iD
Creator: Neil Sessions
Creator: Daniel Hewak ORCID iD
Creator: James Wilkinson ORCID iD
Creator: Ganapathy S. Murugan

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