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Ultrafast laser half-beam writing paradox

Ultrafast laser half-beam writing paradox
Ultrafast laser half-beam writing paradox
Contrary to common belief asymmetric imprinting, revealed as different modification thresholds for two halves of Gaussian beam, is demonstrated in amorphous silicon. The phenomenon is interpreted in terms of anisotropic transport produced by ultrashort light pulses.
Kazansky, P.G.
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Kazanskii, A.
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Beresna, M.
a6dc062e-93c6-46a5-aeb3-8de332cdec7b
Gecevičius, M.
271576ee-dd9d-40b3-ab2f-19686b91dc64
Kazansky, P.G.
a5d123ec-8ea8-408c-8963-4a6d921fd76c
Kazanskii, A.
64330637-cd77-4df3-9420-d9b7f3fe635d
Beresna, M.
a6dc062e-93c6-46a5-aeb3-8de332cdec7b
Gecevičius, M.
271576ee-dd9d-40b3-ab2f-19686b91dc64

Kazansky, P.G., Kazanskii, A., Beresna, M. and Gecevičius, M. (2012) Ultrafast laser half-beam writing paradox. CLEO/QELS 2012, San Jose, United States. 06 - 11 May 2012. 2 pp .

Record type: Conference or Workshop Item (Paper)

Abstract

Contrary to common belief asymmetric imprinting, revealed as different modification thresholds for two halves of Gaussian beam, is demonstrated in amorphous silicon. The phenomenon is interpreted in terms of anisotropic transport produced by ultrashort light pulses.

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More information

Published date: May 2012
Additional Information: CM4K.3
Venue - Dates: CLEO/QELS 2012, San Jose, United States, 2012-05-06 - 2012-05-11
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 379726
URI: http://eprints.soton.ac.uk/id/eprint/379726
PURE UUID: 678aec55-ef2b-4cc0-8fad-638ab5ce3059

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Date deposited: 30 Jul 2015 15:37
Last modified: 02 Aug 2019 16:31

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