Mid infrared GeTe4 waveguides on silicon with a ZnSe isolation layer
Mid infrared GeTe4 waveguides on silicon with a ZnSe isolation layer
GeTe4 waveguides were designed and fabricated on silicon substrates with ZnSe isolation layer. GeTe4 has a refractive index of 3.3 and it needs a lower refractive index isolation layer to realise waveguides on silicon. Numerical modelling was carried out to calculate the thickness of the isolation layer (ZnSe, refractive index ~2.4) required to achieve low loss waveguides. For a loss between 0.1 and 0.01dB/cm it was found that ~ 3 µm thick ZnSe film is required at 6.5 µm wavelength. ZnSe thin films were deposited on silicon, GeTe4 waveguides were fabricated by lift-off technique and were characterised for mid-infrared waveguiding.
Mittal, Vinita
fd5ee9dd-7770-416f-8f47-50ca158b39b0
Craig, C.
2328b42b-552e-4a82-941d-45449e952f10
Sessions, N.P.
ee737092-56b4-403e-a2f9-764e07e42625
Hewak, Daniel W.
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Wilkinson, James S.
73483cf3-d9f2-4688-9b09-1c84257884ca
Murugan, Ganapathy Senthil
a867686e-0535-46cc-ad85-c2342086b25b
Mittal, Vinita
fd5ee9dd-7770-416f-8f47-50ca158b39b0
Craig, C.
2328b42b-552e-4a82-941d-45449e952f10
Sessions, N.P.
ee737092-56b4-403e-a2f9-764e07e42625
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Wilkinson, James S.
73483cf3-d9f2-4688-9b09-1c84257884ca
Murugan, Ganapathy Senthil
a867686e-0535-46cc-ad85-c2342086b25b
Mittal, Vinita, Craig, C., Sessions, N.P., Hewak, Daniel W., Wilkinson, James S. and Murugan, Ganapathy Senthil
(2015)
Mid infrared GeTe4 waveguides on silicon with a ZnSe isolation layer.
SPIE Optics + Photonics, San Diego, United States.
09 - 13 Aug 2015.
8 pp
.
(doi:10.1117/12.2196663).
Record type:
Conference or Workshop Item
(Paper)
Abstract
GeTe4 waveguides were designed and fabricated on silicon substrates with ZnSe isolation layer. GeTe4 has a refractive index of 3.3 and it needs a lower refractive index isolation layer to realise waveguides on silicon. Numerical modelling was carried out to calculate the thickness of the isolation layer (ZnSe, refractive index ~2.4) required to achieve low loss waveguides. For a loss between 0.1 and 0.01dB/cm it was found that ~ 3 µm thick ZnSe film is required at 6.5 µm wavelength. ZnSe thin films were deposited on silicon, GeTe4 waveguides were fabricated by lift-off technique and were characterised for mid-infrared waveguiding.
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SPIEpaper_Final_VM_15072015.pdf
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e-pub ahead of print date: 2015
Venue - Dates:
SPIE Optics + Photonics, San Diego, United States, 2015-08-09 - 2015-08-13
Organisations:
Optoelectronics Research Centre
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Local EPrints ID: 379749
URI: http://eprints.soton.ac.uk/id/eprint/379749
PURE UUID: 592f1272-8750-4628-8cad-80c818e16174
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Date deposited: 07 Aug 2015 09:20
Last modified: 15 Mar 2024 03:42
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