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Switching kinetics of SiC resistive memory for harsh environments

Switching kinetics of SiC resistive memory for harsh environments
Switching kinetics of SiC resistive memory for harsh environments
Cu/a-SiC/Au resistive memory cells are measured using voltage pulses and exhibit the highest ROFF/RON ratio recorded for any resistive memory. The switching kinetics are investigated and fitted to a numerical model, using thermal conductivity and resistivity properties of the dielectric. The SET mechanism of the Cu/a-SiC/Au memory cells is found to be due to ionic motion without joule heating contributions, whereas the RESET mechanism is found to be due to thermally assisted ionic motion. The conductive filament diameter is extracted to be around 4nm. The high thermal conductivity and resistivity for the Cu/a-SiC/Au memory cells result in slow switching but with high thermal reliability and stability, showing potential for use in harsh environments. Radiation properties of SiC memory cells are investigated. No change was seen in DC sweep or pulsed switching nor in conductive mechanisms, up to 2Mrad(Si) using 60Co gamma irradiation. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
2158-3226
077121-[7pp]
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Fan, Junqing
0ca2fd5e-6520-47f8-9bfc-289c313a04cb
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
Gowers, Robert
35716eae-8c54-4dcf-800d-a08c6382dd1e
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Fan, Junqing
0ca2fd5e-6520-47f8-9bfc-289c313a04cb
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
Gowers, Robert
35716eae-8c54-4dcf-800d-a08c6382dd1e
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c

Morgan, Katrina, Fan, Junqing, Huang, Ruomeng, Zhong, Le, Gowers, Robert, Jiang, Liudi and de Groot, C.H. (2015) Switching kinetics of SiC resistive memory for harsh environments. AIP Advances, 5 (7), 077121-[7pp]. (doi:10.1063/1.4926674).

Record type: Article

Abstract

Cu/a-SiC/Au resistive memory cells are measured using voltage pulses and exhibit the highest ROFF/RON ratio recorded for any resistive memory. The switching kinetics are investigated and fitted to a numerical model, using thermal conductivity and resistivity properties of the dielectric. The SET mechanism of the Cu/a-SiC/Au memory cells is found to be due to ionic motion without joule heating contributions, whereas the RESET mechanism is found to be due to thermally assisted ionic motion. The conductive filament diameter is extracted to be around 4nm. The high thermal conductivity and resistivity for the Cu/a-SiC/Au memory cells result in slow switching but with high thermal reliability and stability, showing potential for use in harsh environments. Radiation properties of SiC memory cells are investigated. No change was seen in DC sweep or pulsed switching nor in conductive mechanisms, up to 2Mrad(Si) using 60Co gamma irradiation. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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AIP_SiC_Switching_kinetics.pdf - Accepted Manuscript
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Accepted/In Press date: 30 June 2015
Published date: 9 July 2015
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 379796
URI: http://eprints.soton.ac.uk/id/eprint/379796
ISSN: 2158-3226
PURE UUID: e25acf7d-7c10-4817-b6f4-6d888d79bb4c
ORCID for Katrina Morgan: ORCID iD orcid.org/0000-0002-8600-4322
ORCID for Liudi Jiang: ORCID iD orcid.org/0000-0002-3400-825X
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

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Date deposited: 24 Aug 2015 10:02
Last modified: 10 Dec 2019 01:48

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