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Dataset for Effect of Subthreshold Slope on the Sensitivity of Nanoribbon Sensors

Dataset for Effect of Subthreshold Slope on the Sensitivity of Nanoribbon Sensors
Dataset for Effect of Subthreshold Slope on the Sensitivity of Nanoribbon Sensors
In this work, we investigate how the sensitivity of a nanowire or nanoribbon sensor is influenced by the subthreshold slope of the sensing transistor. Polysilicon nanoribbon sensors are fabricated with a wide range of subthreshold slopes and the sensitivity is characterized using pH measurements. It is shown that there is a strong relationship between the sensitivity and the device subthreshold slope. The sensitivity is characterized using the current sensitivity per pH, which is shown to increase from 1.2% to 33.6% as the subthreshold slope improves from 6.2 V/dec to 0.23 V/dec respectively. We propose a model that relates current sensitivity per pH to the subthreshold slope of the sensing transistor. The model shows that sensitivity is determined only on the sub-threshold slope of the sensing transistor and the choice of gate insulator. The model fully explains the values of current sensitivity per pH for the broad range of subthreshold slopes obtained in our fabricated nanoribbon devices. It is also able to explain values of sensitivity reported in the literature, which range from 2.5%/pH to 650%/pH for a variety of nanoribbon and nanowire sensors. For the first time, the proposed model therefore provides a figure-of-merit for comparing the performance of nanoscale field effect transistor sensors fabricated using different materials and technologies.
University of Southampton
Sun, Kai
b7c648a3-7be8-4613-9d4d-1bf937fb487b
Zeimpekis-Karakonstantinos, Ioannis
a2c354ec-3891-497c-adac-89b3a5d96af0
HU, CHUNXIAO
4892b566-6809-42a8-8285-1c1e93aac730
Ditshego, Jack Nonofo
12e0ccd8-8b73-47bd-a896-07d0268fb769
Owain, Thomas
2eb3052c-6c49-4ae9-8734-8f48027fe912
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
De Planque, Maurits
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Morgan, Hywel
de00d59f-a5a2-48c4-a99a-1d5dd7854174
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Sun, Kai
b7c648a3-7be8-4613-9d4d-1bf937fb487b
Zeimpekis-Karakonstantinos, Ioannis
a2c354ec-3891-497c-adac-89b3a5d96af0
HU, CHUNXIAO
4892b566-6809-42a8-8285-1c1e93aac730
Ditshego, Jack Nonofo
12e0ccd8-8b73-47bd-a896-07d0268fb769
Owain, Thomas
2eb3052c-6c49-4ae9-8734-8f48027fe912
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
De Planque, Maurits
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Morgan, Hywel
de00d59f-a5a2-48c4-a99a-1d5dd7854174
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Sun, Kai, Zeimpekis-Karakonstantinos, Ioannis, HU, CHUNXIAO, Ditshego, Jack Nonofo, Owain, Thomas, Chong, Harold, De Planque, Maurits, Morgan, Hywel and Ashburn, Peter (2015) Dataset for Effect of Subthreshold Slope on the Sensitivity of Nanoribbon Sensors. University of Southampton [Dataset]

Record type: Dataset

Abstract

In this work, we investigate how the sensitivity of a nanowire or nanoribbon sensor is influenced by the subthreshold slope of the sensing transistor. Polysilicon nanoribbon sensors are fabricated with a wide range of subthreshold slopes and the sensitivity is characterized using pH measurements. It is shown that there is a strong relationship between the sensitivity and the device subthreshold slope. The sensitivity is characterized using the current sensitivity per pH, which is shown to increase from 1.2% to 33.6% as the subthreshold slope improves from 6.2 V/dec to 0.23 V/dec respectively. We propose a model that relates current sensitivity per pH to the subthreshold slope of the sensing transistor. The model shows that sensitivity is determined only on the sub-threshold slope of the sensing transistor and the choice of gate insulator. The model fully explains the values of current sensitivity per pH for the broad range of subthreshold slopes obtained in our fabricated nanoribbon devices. It is also able to explain values of sensitivity reported in the literature, which range from 2.5%/pH to 650%/pH for a variety of nanoribbon and nanowire sensors. For the first time, the proposed model therefore provides a figure-of-merit for comparing the performance of nanoscale field effect transistor sensors fabricated using different materials and technologies.

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More information

Published date: 12 August 2015
Organisations: Nanoelectronics and Nanotechnology, ORC Research, Electronics & Computer Science, EEE

Identifiers

Local EPrints ID: 380117
URI: https://eprints.soton.ac.uk/id/eprint/380117
PURE UUID: 6ab286af-aace-451f-a41b-049ed5b84c20
ORCID for Harold Chong: ORCID iD orcid.org/0000-0002-7110-5761
ORCID for Maurits De Planque: ORCID iD orcid.org/0000-0002-8787-0513
ORCID for Hywel Morgan: ORCID iD orcid.org/0000-0003-4850-5676

Catalogue record

Date deposited: 12 Aug 2015 10:18
Last modified: 06 Jun 2018 12:45

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Contributors

Creator: Kai Sun
Creator: Ioannis Zeimpekis-Karakonstantinos
Creator: CHUNXIAO HU
Creator: Jack Nonofo Ditshego
Creator: Thomas Owain
Creator: Harold Chong ORCID iD
Creator: Maurits De Planque ORCID iD
Creator: Hywel Morgan ORCID iD
Creator: Peter Ashburn

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