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Whispering gallery mode resonances from Ge micro-disks on suspended beams

Whispering gallery mode resonances from Ge micro-disks on suspended beams
Whispering gallery mode resonances from Ge micro-disks on suspended beams
Ge is considered to be one of the most promising materials for realizing full monolithic integration of a light source on a silicon (Si) photonic chip. Tensile-strain is required to convert Ge into an optical gain material and to reduce the pumping required for population inversion. Several methods of strain application to Ge are proposed in literature, of which the use of free-standing beams fabricated by micro-electro-mechanical systems (MEMS) processes are capable of delivering very high strain values. However, it is challenging to make an optical cavity within free-standing Ge beams, and here, we demonstrate the fabrication of a simple cavity while imposing tensile strain by suspension using Ge-on-Insulator (GOI) wafers. Ge micro-disks are made on top of suspended SiO2 beams by partially removing the supporting Si substrate. According to Raman spectroscopy, a slight tensile strain was applied to the Ge disks through the bending of the SiO2 beams. Whispering-Gallery-Mode (WGM) resonances were observed from a disk with a diameter of 3 μm, consistent with the finite-domain time-difference simulations. The quality (Q) factor was 192, and upon increasing the pumping power, the Q-factor was degraded due to the red-shift of Ge direct-gap absorption edge caused by heating.
43-58
Al-Attili, Abdelrahman Zaher
534a1c1f-3f8c-4a78-b71b-50c156e23373
Kako, Satoshi
f69c5167-7bf1-49de-bcf2-ce9257d77e4c
Husain, Muhammad K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Higashitarumizu, Naoki
745b7d3e-e723-4fc5-9cf0-b763a8d216d6
Iwamoto, Satoshi
b2b6caf6-235f-4e92-b1a8-e15d09dd3e25
Arakawa, Yasuhiko
3000500d-1c3d-4d03-911c-b59c8b4f7c75
Ishikawa, Yasuhiko
e969492d-8143-4aca-9f9c-af4de65b7377
Arimoto, Hideo
b88aab51-ad62-4127-9ca5-d86e3d714531
Oda, Katsuya
7a476aa6-20a1-4d0a-938f-99d52720ae68
Ido, Tatemi
e05a93c5-2e59-46cf-84c7-2d1d48646e9d
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Al-Attili, Abdelrahman Zaher
534a1c1f-3f8c-4a78-b71b-50c156e23373
Kako, Satoshi
f69c5167-7bf1-49de-bcf2-ce9257d77e4c
Husain, Muhammad K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Higashitarumizu, Naoki
745b7d3e-e723-4fc5-9cf0-b763a8d216d6
Iwamoto, Satoshi
b2b6caf6-235f-4e92-b1a8-e15d09dd3e25
Arakawa, Yasuhiko
3000500d-1c3d-4d03-911c-b59c8b4f7c75
Ishikawa, Yasuhiko
e969492d-8143-4aca-9f9c-af4de65b7377
Arimoto, Hideo
b88aab51-ad62-4127-9ca5-d86e3d714531
Oda, Katsuya
7a476aa6-20a1-4d0a-938f-99d52720ae68
Ido, Tatemi
e05a93c5-2e59-46cf-84c7-2d1d48646e9d
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc

Al-Attili, Abdelrahman Zaher, Kako, Satoshi, Husain, Muhammad K., Gardes, Frederic Y., Higashitarumizu, Naoki, Iwamoto, Satoshi, Arakawa, Yasuhiko, Ishikawa, Yasuhiko, Arimoto, Hideo, Oda, Katsuya, Ido, Tatemi and Saito, Shinichi (2015) Whispering gallery mode resonances from Ge micro-disks on suspended beams. Frontiers in Materials, 2, 43-58. (doi:10.3389/fmats.2015.00043).

Record type: Article

Abstract

Ge is considered to be one of the most promising materials for realizing full monolithic integration of a light source on a silicon (Si) photonic chip. Tensile-strain is required to convert Ge into an optical gain material and to reduce the pumping required for population inversion. Several methods of strain application to Ge are proposed in literature, of which the use of free-standing beams fabricated by micro-electro-mechanical systems (MEMS) processes are capable of delivering very high strain values. However, it is challenging to make an optical cavity within free-standing Ge beams, and here, we demonstrate the fabrication of a simple cavity while imposing tensile strain by suspension using Ge-on-Insulator (GOI) wafers. Ge micro-disks are made on top of suspended SiO2 beams by partially removing the supporting Si substrate. According to Raman spectroscopy, a slight tensile strain was applied to the Ge disks through the bending of the SiO2 beams. Whispering-Gallery-Mode (WGM) resonances were observed from a disk with a diameter of 3 μm, consistent with the finite-domain time-difference simulations. The quality (Q) factor was 192, and upon increasing the pumping power, the Q-factor was degraded due to the red-shift of Ge direct-gap absorption edge caused by heating.

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Accepted/In Press date: 10 May 2015
Published date: 28 May 2015
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 380131
URI: https://eprints.soton.ac.uk/id/eprint/380131
PURE UUID: 160ee65f-4f3f-4fc3-bb14-2900bfa47ecb
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 06 Aug 2015 13:55
Last modified: 07 Aug 2019 00:34

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