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Amorphous hydrogenated silicon modified by femtosecond laser radiation for photovoltaics

Amorphous hydrogenated silicon modified by femtosecond laser radiation for photovoltaics
Amorphous hydrogenated silicon modified by femtosecond laser radiation for photovoltaics
Thin film technology based on hydrogenated amorphous silicon (a-Si:H) has been playing a significant role in thin-film photovoltaics. However, a-Si:H based solar cells suffer from a low carrier mobility and light-induced degradation. In order to diminish these effects, tandem solar cells based on amorphous and nanocrystalline silicon (nc-Si) are developed. One of the technologically attractive methods for incorporating nc-Si into a-Si:H is laser induced crystallization.

Most of the studies on laser crystallization of a-Si:H employ picosecond and nanosecond laser pulses with radiation photon energies higher than the band gap in a-Si:H of 1.6-1.8 eV. In the last few years, femtosecond laser driven crystallization of a-Si:H films attracts considerable interest. Intense femtosecond laser pulses can alter the structure of the film at photon energies smaller than the band gap. Numerous studies on the structural transformation of a-Si:H induced by femtosecond laser pulses have been reported. However there is a lack of data on the electric and photoelectric properties which are vital for the application of femtosecond laser introduced structures in solar cells.

Here we present the results of optical, electric and photoelectric properties of a-Si:H films treated by femtosecond laser radiation with different wavelengths and laser fluencies. Specifically the correlation between changes of these properties and the film structure is shown and the problem of hydrogen out-diffusion is discussed.
Beresna, M.
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Kazanskii, A.G.
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Emelyanov, A.V.
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Forsh, P.A.
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Khenkin, M.V.
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Terukov, E.I.
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Gecevičius, M.
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Drevinskas, R.
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Kazansky, P.G.
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Beresna, M.
a6dc062e-93c6-46a5-aeb3-8de332cdec7b
Kazanskii, A.G.
a123a8d5-67bb-47a4-88f4-76c949c5f792
Emelyanov, A.V.
1a2de0b0-3faa-4d4a-958a-0a678301df48
Forsh, P.A.
c2bb1dc8-3d86-444b-8ca4-1270971380f5
Khenkin, M.V.
301afb96-212e-471a-be48-f3c139500085
Terukov, E.I.
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Gecevičius, M.
271576ee-dd9d-40b3-ab2f-19686b91dc64
Drevinskas, R.
23f858b5-8750-4113-ba11-49cfefc3dbb7
Kazansky, P.G.
a5d123ec-8ea8-408c-8963-4a6d921fd76c

Beresna, M., Kazanskii, A.G., Emelyanov, A.V., Forsh, P.A., Khenkin, M.V., Terukov, E.I., Gecevičius, M., Drevinskas, R. and Kazansky, P.G. (2014) Amorphous hydrogenated silicon modified by femtosecond laser radiation for photovoltaics. ICOOPMA '14: Sixth International Conference on Optical, Optoelectronic and Photonic Materials and Applications, Leeds, United Kingdom. 27 Jul - 31 Aug 2014.

Record type: Conference or Workshop Item (Paper)

Abstract

Thin film technology based on hydrogenated amorphous silicon (a-Si:H) has been playing a significant role in thin-film photovoltaics. However, a-Si:H based solar cells suffer from a low carrier mobility and light-induced degradation. In order to diminish these effects, tandem solar cells based on amorphous and nanocrystalline silicon (nc-Si) are developed. One of the technologically attractive methods for incorporating nc-Si into a-Si:H is laser induced crystallization.

Most of the studies on laser crystallization of a-Si:H employ picosecond and nanosecond laser pulses with radiation photon energies higher than the band gap in a-Si:H of 1.6-1.8 eV. In the last few years, femtosecond laser driven crystallization of a-Si:H films attracts considerable interest. Intense femtosecond laser pulses can alter the structure of the film at photon energies smaller than the band gap. Numerous studies on the structural transformation of a-Si:H induced by femtosecond laser pulses have been reported. However there is a lack of data on the electric and photoelectric properties which are vital for the application of femtosecond laser introduced structures in solar cells.

Here we present the results of optical, electric and photoelectric properties of a-Si:H films treated by femtosecond laser radiation with different wavelengths and laser fluencies. Specifically the correlation between changes of these properties and the film structure is shown and the problem of hydrogen out-diffusion is discussed.

Full text not available from this repository.

More information

Published date: July 2014
Venue - Dates: ICOOPMA '14: Sixth International Conference on Optical, Optoelectronic and Photonic Materials and Applications, Leeds, United Kingdom, 2014-07-27 - 2014-08-31
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 380752
URI: http://eprints.soton.ac.uk/id/eprint/380752
PURE UUID: c1958ce0-4101-4415-a01c-4bc00c94fce8

Catalogue record

Date deposited: 07 Sep 2015 09:24
Last modified: 29 Nov 2018 17:31

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