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Silicon sensitisation using light harvesting layers

Silicon sensitisation using light harvesting layers
Silicon sensitisation using light harvesting layers
Langmuir–Blodgett monolayers of a cyanine dye mixed with stearic acid were deposited on glass and silicon substrates with spacer layers of pure stearic acid monolayers or silicon dioxide films deposited by PECVD. By using the time correlated single photon counting technique, time resolved emission spectra (TRES) and decay curves were measured to characterise the dependence of energy transfer rate on the separation between the dye monolayer and the silicon surface and also for the dye concentrations in the monolayers. We observe interlayer energy transfer between monomers, dimers and higher aggregates present in the monolayer deposited on glass but also competing directly with energy transfer to silicon at close distances. We find that the fluorescence lifetime of the dye monolayer is significantly shortened when deposited close to the silicon surface signifying efficient energy transfer. The dissipation of the excitation energy near silicon is explained using the classical theory developed for metals and a deviation is observed for monolayers deposited at distances close to the silicon surface
1432-8917
1-14
Fang, Liping
30769c2e-b4c2-4c06-adfc-6f01fab63db3
Alderman, Nicholas
dfe8ce6f-12d1-4337-b9ea-7787bc82f2b5
Danos, Lefteris
c8d070de-d46a-4daa-95cb-5f37b8dbfb50
Markvart, Thomas
f21e82ec-4e3b-4485-9f27-ffc0102fdf1c
Fang, Liping
30769c2e-b4c2-4c06-adfc-6f01fab63db3
Alderman, Nicholas
dfe8ce6f-12d1-4337-b9ea-7787bc82f2b5
Danos, Lefteris
c8d070de-d46a-4daa-95cb-5f37b8dbfb50
Markvart, Thomas
f21e82ec-4e3b-4485-9f27-ffc0102fdf1c

Fang, Liping, Alderman, Nicholas, Danos, Lefteris and Markvart, Thomas (2014) Silicon sensitisation using light harvesting layers. Materials Research Innovations, 18 (7), 1-14. (doi:10.1179/1433075X14Y.0000000257).

Record type: Article

Abstract

Langmuir–Blodgett monolayers of a cyanine dye mixed with stearic acid were deposited on glass and silicon substrates with spacer layers of pure stearic acid monolayers or silicon dioxide films deposited by PECVD. By using the time correlated single photon counting technique, time resolved emission spectra (TRES) and decay curves were measured to characterise the dependence of energy transfer rate on the separation between the dye monolayer and the silicon surface and also for the dye concentrations in the monolayers. We observe interlayer energy transfer between monomers, dimers and higher aggregates present in the monolayer deposited on glass but also competing directly with energy transfer to silicon at close distances. We find that the fluorescence lifetime of the dye monolayer is significantly shortened when deposited close to the silicon surface signifying efficient energy transfer. The dissipation of the excitation energy near silicon is explained using the classical theory developed for metals and a deviation is observed for monolayers deposited at distances close to the silicon surface

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Accepted/In Press date: 31 October 2014
Published date: November 2014
Organisations: Engineering Science Unit

Identifiers

Local EPrints ID: 381108
URI: http://eprints.soton.ac.uk/id/eprint/381108
ISSN: 1432-8917
PURE UUID: b3aeffc8-75ca-4042-9a6d-7b6c6c97bdef

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Date deposited: 24 Sep 2015 11:06
Last modified: 14 Mar 2024 21:10

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Contributors

Author: Liping Fang
Author: Nicholas Alderman
Author: Lefteris Danos
Author: Thomas Markvart

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