1120 nm diode-pumped Bi-doped fiber amplifier
1120 nm diode-pumped Bi-doped fiber amplifier
Bismuth-doped aluminosilicate fiber has been fabricated by the MCVD-solution doping method and characterized for its unsaturable loss and gain. The amplifier performance has been compared for a novel pumping wavelength of 1120 nm with the conventional pumping wavelength region of 1047 nm. Unsaturable loss was 65% and 35% at 1047 and 1120 nm, pump wavelengths, respectively. A maximum gain of about 8 dB at 1180 nm for a fiber length of 100 m was observed with 1120 nm pumping. Gain enhancement of 70% was achieved with the 1120 nm pump as compared to the 1047 nm pump. A further 3.5 dB gain was obtained on simultaneous pumping at 1047 and 1120 nm.
2441-2444
Thipparapu, Naresh Kumar
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Jain, Saurabh
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Umnikov, Andrey
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Barua, Pranabesh
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Sahu, Jayanta
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15 May 2015
Thipparapu, Naresh Kumar
a36a2b4c-b75c-4976-a753-b5fab9e54150
Jain, Saurabh
bf4af598-26bf-47f4-a0a4-800095a23eb5
Umnikov, Andrey
9b57cc1b-d0f9-4c34-9409-a58ee0f70250
Barua, Pranabesh
ab53bdd9-e00f-46b0-b4f4-5ab6534fe8a6
Sahu, Jayanta
009f5fb3-6555-411a-9a0c-9a1b5a29ceb2
Thipparapu, Naresh Kumar, Jain, Saurabh, Umnikov, Andrey, Barua, Pranabesh and Sahu, Jayanta
(2015)
1120 nm diode-pumped Bi-doped fiber amplifier.
Optics Letters, 40 (10), .
(doi:10.1364/OL.40.002441).
Abstract
Bismuth-doped aluminosilicate fiber has been fabricated by the MCVD-solution doping method and characterized for its unsaturable loss and gain. The amplifier performance has been compared for a novel pumping wavelength of 1120 nm with the conventional pumping wavelength region of 1047 nm. Unsaturable loss was 65% and 35% at 1047 and 1120 nm, pump wavelengths, respectively. A maximum gain of about 8 dB at 1180 nm for a fiber length of 100 m was observed with 1120 nm pumping. Gain enhancement of 70% was achieved with the 1120 nm pump as compared to the 1047 nm pump. A further 3.5 dB gain was obtained on simultaneous pumping at 1047 and 1120 nm.
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Submitted date: 23 March 2015
Accepted/In Press date: 27 April 2015
Published date: 15 May 2015
Organisations:
Optoelectronics Research Centre
Identifiers
Local EPrints ID: 381666
URI: http://eprints.soton.ac.uk/id/eprint/381666
ISSN: 0146-9592
PURE UUID: c0ac0026-026a-47a5-85cc-7d4a6582a419
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Date deposited: 15 Oct 2015 07:59
Last modified: 15 Mar 2024 03:09
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Author:
Naresh Kumar Thipparapu
Author:
Saurabh Jain
Author:
Andrey Umnikov
Author:
Pranabesh Barua
Author:
Jayanta Sahu
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