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Fabrication of tin sulphide and emerging transition metal di-chalcogenides by CVD

Fabrication of tin sulphide and emerging transition metal di-chalcogenides by CVD
Fabrication of tin sulphide and emerging transition metal di-chalcogenides by CVD
Graphene, one of the most important two dimensional (2D) materials, has been attracting increasing interest and new applications in nano-scale electronic and photonic applications. The zero bandgap of graphene, however, has restricted its use in some optoelectronic applications. Recently, transition metal di-chalcogenides (TMDCs) such as MoS2, MoSe2, WS2 and WSe2 have become a noteworthy complimentary material to graphene sharing many of its properties [1]. They may however offer properties that are unattainable in graphene since TMDCs offer tuneability through both composition and number of layers, allowing a bandgap transition from indirect to, with the single layer, direct. The use of chalcogenide thin films such as CuInGaSe2 and CdTe in solar cells have been commercialized but the search for low cost, low toxicity and earth abundant high efficiency absorbing materials remains under investigation. Tin mono-sulphide, a p-type semiconductor with a band gap of ~1.3 eV, has attracted great interest for the use as an absorber layer in chalcogenide thin film solar cells due to its desirable properties. In addition, TMDCs are now emerging in the thin film photovoltaic [2] and photo-catalyst [3] applications. Chemical vapour deposition (CVD) technology has the advantage of offering conformal, scalable, and controllable thin film growth on a variety of different substrates. Here we report our recent developments in CVD technology for Sn-S and 2D TMDCs materials, in particularly MoS2 and WS2. These chalcogenide thin films have been deposited by CVD onto various substrates at room temperature then annealed at different temperatures with the aim of optimizing the properties of the thin films to achieve the required phase. These annealed thin films were further characterized with SEM, TEM, EDX, XRD, Raman and UV-VIS-NIR spectroscopy. The preliminary results of these CVD-grown chalcogenide thin films show great promise for energy applications.
Huang, C.
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Alzaidy, Ghadah A.
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Aspiotis, Nikolaos
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Weatherby, Ed C.
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Wang, Shuncai
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Walker, John C.
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Jiang, Zheng
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Hewak, Daniel
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Huang, C.
825f7447-6d02-48f6-b95a-fa33da71f106
Alzaidy, Ghadah A.
2d39b828-3eb4-4d96-85e6-d436a2b71435
Aspiotis, Nikolaos
b32d40f9-0496-464e-bfcc-217f57ca9dc3
Weatherby, Ed C.
90e34e23-3a6e-432f-8003-6510efbe1d02
Wang, Shuncai
8a390e2d-6552-4c7c-a88f-25bf9d6986a6
Walker, John C.
991d793e-2b84-403b-a9ee-0a802b90f06d
Jiang, Zheng
bcf19e78-f5c3-48e6-802b-fe77bd12deab
Hewak, Daniel
87c80070-c101-4f7a-914f-4cc3131e3db0

Huang, C., Alzaidy, Ghadah A., Aspiotis, Nikolaos, Weatherby, Ed C., Wang, Shuncai, Walker, John C., Jiang, Zheng and Hewak, Daniel (2015) Fabrication of tin sulphide and emerging transition metal di-chalcogenides by CVD. The 2nd China-United States Symposium on Energy (CUE-2 2015), China. 26 - 28 Jun 2015.

Record type: Conference or Workshop Item (Other)

Abstract

Graphene, one of the most important two dimensional (2D) materials, has been attracting increasing interest and new applications in nano-scale electronic and photonic applications. The zero bandgap of graphene, however, has restricted its use in some optoelectronic applications. Recently, transition metal di-chalcogenides (TMDCs) such as MoS2, MoSe2, WS2 and WSe2 have become a noteworthy complimentary material to graphene sharing many of its properties [1]. They may however offer properties that are unattainable in graphene since TMDCs offer tuneability through both composition and number of layers, allowing a bandgap transition from indirect to, with the single layer, direct. The use of chalcogenide thin films such as CuInGaSe2 and CdTe in solar cells have been commercialized but the search for low cost, low toxicity and earth abundant high efficiency absorbing materials remains under investigation. Tin mono-sulphide, a p-type semiconductor with a band gap of ~1.3 eV, has attracted great interest for the use as an absorber layer in chalcogenide thin film solar cells due to its desirable properties. In addition, TMDCs are now emerging in the thin film photovoltaic [2] and photo-catalyst [3] applications. Chemical vapour deposition (CVD) technology has the advantage of offering conformal, scalable, and controllable thin film growth on a variety of different substrates. Here we report our recent developments in CVD technology for Sn-S and 2D TMDCs materials, in particularly MoS2 and WS2. These chalcogenide thin films have been deposited by CVD onto various substrates at room temperature then annealed at different temperatures with the aim of optimizing the properties of the thin films to achieve the required phase. These annealed thin films were further characterized with SEM, TEM, EDX, XRD, Raman and UV-VIS-NIR spectroscopy. The preliminary results of these CVD-grown chalcogenide thin films show great promise for energy applications.

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More information

e-pub ahead of print date: 27 June 2015
Venue - Dates: The 2nd China-United States Symposium on Energy (CUE-2 2015), China, 2015-06-26 - 2015-06-28
Organisations: Optoelectronics Research Centre

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Local EPrints ID: 382001
URI: https://eprints.soton.ac.uk/id/eprint/382001
PURE UUID: 78dd7cfb-dca6-4da1-aba2-4e46dbeab9b3
ORCID for C. Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for Zheng Jiang: ORCID iD orcid.org/0000-0002-7972-6175
ORCID for Daniel Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 15 Oct 2015 13:09
Last modified: 17 Nov 2018 01:36

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