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Total ionizing dose response of fluorine implanted silicon-on-insulator buried oxide

Total ionizing dose response of fluorine implanted silicon-on-insulator buried oxide
Total ionizing dose response of fluorine implanted silicon-on-insulator buried oxide
A comparison is made of the behavior of silicon on insulator buried oxides and wet thermal oxides before and after fluorine implantation and irradiation. Before irradiation, the electrical characteristics of the thermal oxide and buried oxide are significantly different. The fluorine implantation in the smart-cut® buried oxide results in a large negative threshold shift due to the trapping of positive charges. These charges are associated with positively charged fluorine ions on implantation and are trapped at pre-existing trap sites, particularly at the bonding interface, and at additional defects caused by the ion implantation damage. This shift is absent in the wet thermal oxide. After Co60 irradiation up to 500 Krad(Si), the negative flatband and threshold voltage shift in the fluorine implanted buried oxide is larger than in the unimplanted buried oxide indicating that any potential positive effect of fluorine on the passivation of interface states is more than offset by the additional trapping sites created during implantation. These results demonstrate that in the design of a transistor utmost care must be taken to prevent any fluorine being implanted into the buried oxide.
0026-2714
2339-2343
Potter, Kenneth
dbd5061f-49e8-4fad-8c58-31357b84e3fe
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Shaw, Chris
76d8effd-a5f7-49ea-aa53-922c83edaf3a
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Redman-White, William
d5376167-c925-460f-8e9c-13bffda8e0bf
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Potter, Kenneth
dbd5061f-49e8-4fad-8c58-31357b84e3fe
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Shaw, Chris
76d8effd-a5f7-49ea-aa53-922c83edaf3a
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Redman-White, William
d5376167-c925-460f-8e9c-13bffda8e0bf
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c

Potter, Kenneth, Morgan, Katrina, Shaw, Chris, Ashburn, Peter, Redman-White, William and de Groot, Kees (2014) Total ionizing dose response of fluorine implanted silicon-on-insulator buried oxide. Microelectronics Reliability, 54 (9-10), 2339-2343. (doi:10.1016/j.microrel.2014.07.018).

Record type: Article

Abstract

A comparison is made of the behavior of silicon on insulator buried oxides and wet thermal oxides before and after fluorine implantation and irradiation. Before irradiation, the electrical characteristics of the thermal oxide and buried oxide are significantly different. The fluorine implantation in the smart-cut® buried oxide results in a large negative threshold shift due to the trapping of positive charges. These charges are associated with positively charged fluorine ions on implantation and are trapped at pre-existing trap sites, particularly at the bonding interface, and at additional defects caused by the ion implantation damage. This shift is absent in the wet thermal oxide. After Co60 irradiation up to 500 Krad(Si), the negative flatband and threshold voltage shift in the fluorine implanted buried oxide is larger than in the unimplanted buried oxide indicating that any potential positive effect of fluorine on the passivation of interface states is more than offset by the additional trapping sites created during implantation. These results demonstrate that in the design of a transistor utmost care must be taken to prevent any fluorine being implanted into the buried oxide.

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Accepted/In Press date: 8 July 2014
e-pub ahead of print date: 10 August 2014
Published date: September 2014
Organisations: Optoelectronics Research Centre, Electronics & Computer Science, Nanoelectronics and Nanotechnology, EEE

Identifiers

Local EPrints ID: 382873
URI: https://eprints.soton.ac.uk/id/eprint/382873
ISSN: 0026-2714
PURE UUID: 27f5a60f-5f88-4af4-9b69-1cad9a340ddb
ORCID for Katrina Morgan: ORCID iD orcid.org/0000-0002-8600-4322
ORCID for Kees de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 03 Nov 2015 15:29
Last modified: 29 Oct 2019 01:55

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Contributors

Author: Kenneth Potter
Author: Katrina Morgan ORCID iD
Author: Chris Shaw
Author: Peter Ashburn
Author: William Redman-White
Author: Kees de Groot ORCID iD

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