An electrically driven solid state modulator
An electrically driven solid state modulator
Simulation results for the design and fabrication of an electrically driven solid state modulator are presented. The design criteria has identified various trade-offs in the manufacturing of an electrically driven modulator using a p-i-n diode to be made from high purity Ge. The issues relating to the doping, layer thickness and contact material for the diode fabrication are discussed.
A compromise between the high 'ON' state transmission and uniformity is required to achieve the optimum performance from the device. Using FEMLAB and ATLAS a p-i-n diode with different apertures has been simulated which clearly show the effects of non-uniformity and the requirement of a mesh-type electrode for a uniform absorption across the large device apertures.
infrared, p-i-n diode, solid-state modulator, high purity ge
Uppal, Suresh
14fb58b1-4143-4210-8f5f-28faffa61f80
Rutt, Harvey N.
e09fa327-0c01-467a-9898-4e7f0cd715fc
2005
Uppal, Suresh
14fb58b1-4143-4210-8f5f-28faffa61f80
Rutt, Harvey N.
e09fa327-0c01-467a-9898-4e7f0cd715fc
Uppal, Suresh and Rutt, Harvey N.
(2005)
An electrically driven solid state modulator.
2nd EMRS DTC Technical Conference, Edinburgh, UK.
16 - 17 Jun 2005.
5 pp
.
Record type:
Conference or Workshop Item
(Paper)
Abstract
Simulation results for the design and fabrication of an electrically driven solid state modulator are presented. The design criteria has identified various trade-offs in the manufacturing of an electrically driven modulator using a p-i-n diode to be made from high purity Ge. The issues relating to the doping, layer thickness and contact material for the diode fabrication are discussed.
A compromise between the high 'ON' state transmission and uniformity is required to achieve the optimum performance from the device. Using FEMLAB and ATLAS a p-i-n diode with different apertures has been simulated which clearly show the effects of non-uniformity and the requirement of a mesh-type electrode for a uniform absorption across the large device apertures.
More information
Published date: 2005
Additional Information:
Publication No: 3132
Venue - Dates:
2nd EMRS DTC Technical Conference, Edinburgh, UK, 2005-06-16 - 2005-06-17
Keywords:
infrared, p-i-n diode, solid-state modulator, high purity ge
Identifiers
Local EPrints ID: 38294
URI: http://eprints.soton.ac.uk/id/eprint/38294
PURE UUID: 13aef396-d794-447d-9224-caa57192e3f7
Catalogue record
Date deposited: 06 Jun 2006
Last modified: 15 Mar 2024 08:05
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Contributors
Author:
Suresh Uppal
Author:
Harvey N. Rutt
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