Diode pumped Bi-doped fiber laser operating at 1360nm
Diode pumped Bi-doped fiber laser operating at 1360nm
Bi-doped phosphosilicate fibers are fabricated by MCVD-solution doping technique under different oxidation conditions. Fibers are evaluated for unsaturable loss and laser performance. A 22mW all-fiber Bi-laser is demonstrated at 1360nm by LD pumping at 1267nm.
Thipparapu, Naresh Kumar
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Umnikov, Andrey
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Jain, Saurabh
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Barua, Pranabesh
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Sahu, Jayanta
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Thipparapu, Naresh Kumar
a36a2b4c-b75c-4976-a753-b5fab9e54150
Umnikov, Andrey
9b57cc1b-d0f9-4c34-9409-a58ee0f70250
Jain, Saurabh
bf4af598-26bf-47f4-a0a4-800095a23eb5
Barua, Pranabesh
ab53bdd9-e00f-46b0-b4f4-5ab6534fe8a6
Sahu, Jayanta
009f5fb3-6555-411a-9a0c-9a1b5a29ceb2
Thipparapu, Naresh Kumar, Umnikov, Andrey, Jain, Saurabh, Barua, Pranabesh and Sahu, Jayanta
(2015)
Diode pumped Bi-doped fiber laser operating at 1360nm.
4th Workshop on Specialty Optical Fibers and Their Applications (WSOF-2015), Hong Kong, Hong Kong.
04 - 06 Nov 2015.
Record type:
Conference or Workshop Item
(Paper)
Abstract
Bi-doped phosphosilicate fibers are fabricated by MCVD-solution doping technique under different oxidation conditions. Fibers are evaluated for unsaturable loss and laser performance. A 22mW all-fiber Bi-laser is demonstrated at 1360nm by LD pumping at 1267nm.
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Diode Pumped Bi-doped Fiber Laser Operating at 1360nm.pdf
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e-pub ahead of print date: 4 November 2015
Venue - Dates:
4th Workshop on Specialty Optical Fibers and Their Applications (WSOF-2015), Hong Kong, Hong Kong, 2015-11-04 - 2015-11-06
Organisations:
Optoelectronics Research Centre
Identifiers
Local EPrints ID: 383763
URI: http://eprints.soton.ac.uk/id/eprint/383763
PURE UUID: d8ca2f1b-f919-4a42-93b4-425a8daded7f
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Date deposited: 19 Nov 2015 12:13
Last modified: 15 Mar 2024 03:09
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Contributors
Author:
Naresh Kumar Thipparapu
Author:
Andrey Umnikov
Author:
Saurabh Jain
Author:
Pranabesh Barua
Author:
Jayanta Sahu
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