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Towards monolithic integration of germanium light sources on silicon chips

Towards monolithic integration of germanium light sources on silicon chips
Towards monolithic integration of germanium light sources on silicon chips
Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge cannot emit light efficiently. However, the direct band gap energy is close to the indirect one, and significant engineering efforts are being made to convert Ge into an efficient gain material monolithically integrated on a Si chip. In this article, we will review the engineering challenges of developing Ge light sources fabricated using nano-fabrication technologies compatible with Complementary Metal-Oxide-Semiconductor (CMOS) processes. In particular, we review recent progress in applying high-tensile strain to Ge to reduce the direct band gap. Another important technique is doping Ge with donor impurities to fill the indirect band gap valleys in the conduction band. Realization of carrier confinement structures and suitable optical cavities will be discussed. Finally, we will discuss possible applications of Ge light sources in potential photonics-electronics convergent systems.
0268-1242
1-37
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Al-Attili, Abdelrahman
534a1c1f-3f8c-4a78-b71b-50c156e23373
Oda, Katsuya
7a476aa6-20a1-4d0a-938f-99d52720ae68
Ishikawa, Yasuhiko
e969492d-8143-4aca-9f9c-af4de65b7377
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Al-Attili, Abdelrahman
534a1c1f-3f8c-4a78-b71b-50c156e23373
Oda, Katsuya
7a476aa6-20a1-4d0a-938f-99d52720ae68
Ishikawa, Yasuhiko
e969492d-8143-4aca-9f9c-af4de65b7377

Saito, Shinichi, Al-Attili, Abdelrahman, Oda, Katsuya and Ishikawa, Yasuhiko (2016) Towards monolithic integration of germanium light sources on silicon chips. Semiconductor Science and Technology, 1-37. (In Press)

Record type: Article

Abstract

Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge cannot emit light efficiently. However, the direct band gap energy is close to the indirect one, and significant engineering efforts are being made to convert Ge into an efficient gain material monolithically integrated on a Si chip. In this article, we will review the engineering challenges of developing Ge light sources fabricated using nano-fabrication technologies compatible with Complementary Metal-Oxide-Semiconductor (CMOS) processes. In particular, we review recent progress in applying high-tensile strain to Ge to reduce the direct band gap. Another important technique is doping Ge with donor impurities to fill the indirect band gap valleys in the conduction band. Realization of carrier confinement structures and suitable optical cavities will be discussed. Finally, we will discuss possible applications of Ge light sources in potential photonics-electronics convergent systems.

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Submitted date: 10 November 2015
Accepted/In Press date: 8 January 2016
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 383893
URI: http://eprints.soton.ac.uk/id/eprint/383893
ISSN: 0268-1242
PURE UUID: 7e4c11f3-f5b7-4a8c-8ce9-1cd5ffa27463
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

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Date deposited: 12 Jan 2016 16:25
Last modified: 14 Jul 2020 00:34

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