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Phase-change memory properties of electrodeposited Ge-Sb-Te thin film

Phase-change memory properties of electrodeposited Ge-Sb-Te thin film
Phase-change memory properties of electrodeposited Ge-Sb-Te thin film
We report the properties of a series of electrodeposited Ge-Sb-Te alloys with various compositions. It is shown that the Sb/Ge ratio can be varied in a controlled way by changing the electrodeposition potential. This method opens up the prospect of depositing Ge-Sb-Te super-lattice structures by electrodeposition. Material and electrical characteristics of various compositions have been investigated in detail, showing up to three orders of magnitude resistance ratio between the amorphous and crystalline states and endurance up to 1000 cycles
phase-change memory, electrodeposition, Ge-Sb-Te
1931-7573
1-7
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Kissling, Gabriela
b9ad7a6b-70b9-48b6-ac03-a189278dd2d9
Jolleys, Andrew
29e25ac4-2ff1-4267-8278-a433a94d5c6f
Bartlett, Philip
d99446db-a59d-4f89-96eb-f64b5d8bb075
Hector, Andrew
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
de Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Kissling, Gabriela
b9ad7a6b-70b9-48b6-ac03-a189278dd2d9
Jolleys, Andrew
29e25ac4-2ff1-4267-8278-a433a94d5c6f
Bartlett, Philip
d99446db-a59d-4f89-96eb-f64b5d8bb075
Hector, Andrew
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
de Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c

Huang, Ruomeng, Kissling, Gabriela, Jolleys, Andrew, Bartlett, Philip, Hector, Andrew, Levason, William, Reid, Gillian and de Groot, Cornelis (2015) Phase-change memory properties of electrodeposited Ge-Sb-Te thin film. Nanoscale Research Letters, 10, 1-7. (doi:10.1186/s11671-015-1136-4).

Record type: Article

Abstract

We report the properties of a series of electrodeposited Ge-Sb-Te alloys with various compositions. It is shown that the Sb/Ge ratio can be varied in a controlled way by changing the electrodeposition potential. This method opens up the prospect of depositing Ge-Sb-Te super-lattice structures by electrodeposition. Material and electrical characteristics of various compositions have been investigated in detail, showing up to three orders of magnitude resistance ratio between the amorphous and crystalline states and endurance up to 1000 cycles

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Huang2015-Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film.pdf - Other
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More information

Accepted/In Press date: 23 October 2015
Published date: 2 November 2015
Keywords: phase-change memory, electrodeposition, Ge-Sb-Te
Organisations: Nanoelectronics and Nanotechnology, Electrochemistry, Organic Chemistry: SCF

Identifiers

Local EPrints ID: 384018
URI: http://eprints.soton.ac.uk/id/eprint/384018
ISSN: 1931-7573
PURE UUID: 33b7dcc6-ef64-478d-94d5-ee1427145d43
ORCID for Gabriela Kissling: ORCID iD orcid.org/0000-0003-4701-7160
ORCID for Philip Bartlett: ORCID iD orcid.org/0000-0002-7300-6900
ORCID for Andrew Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for William Levason: ORCID iD orcid.org/0000-0003-3540-0971
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468
ORCID for Cornelis de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 07 Dec 2015 10:13
Last modified: 18 Feb 2021 16:34

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Contributors

Author: Ruomeng Huang
Author: Gabriela Kissling ORCID iD
Author: Andrew Jolleys
Author: Philip Bartlett ORCID iD
Author: Andrew Hector ORCID iD
Author: William Levason ORCID iD
Author: Gillian Reid ORCID iD

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