A µ-controller-based system for interfacing selector-less RRAM crossbar arrays
A µ-controller-based system for interfacing selector-less RRAM crossbar arrays
Selectorless crossbar arrays of resistive random access memory (RRAM), also known as memristors, conduct large sneak currents during operation, which can significantly corrupt the accuracy of cross-point analog resistance (Mt) measurements. In order to mitigate this issue, we have designed, built, and tested a memristor characterization and testing (mCAT) instrument that forces redistribution of sneak currents within the crossbar array, dramatically increasing Mt measurement accuracy. We calibrated the mCAT using a custom-made 32 × 32 discrete resistive crossbar array, and subsequently demonstrated its functionality on solid-state TiO2-x RRAM arrays, on wafer and packaged, of the same size. Our platform can measure standalone Mt in the range of 1 kΩ to 1 MΩ with <1% error. For our custom resistive crossbar, 90% of devices of the same resistance range were measured with <10% error. The platform's limitations have been quantified using large-scale nonideal crossbar simulations.
crossbars, memristors, resistive random-access memory (RRAM), sneak paths
2190-2196
Berdan, Radu
e259cd5a-6e30-4439-94c0-9c44903e1e75
Serb, Alexantrou
30f5ec26-f51d-42b3-85fd-0325a27a792c
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Regoutz, Anna
5f9fa784-fea8-42f9-949f-4fe7a908f8ce
Papavassiliou, Christos
86fe7042-20a3-47a9-9430-2bdb6c260303
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
July 2015
Berdan, Radu
e259cd5a-6e30-4439-94c0-9c44903e1e75
Serb, Alexantrou
30f5ec26-f51d-42b3-85fd-0325a27a792c
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Regoutz, Anna
5f9fa784-fea8-42f9-949f-4fe7a908f8ce
Papavassiliou, Christos
86fe7042-20a3-47a9-9430-2bdb6c260303
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Berdan, Radu, Serb, Alexantrou and Khiat, Ali et al.
(2015)
A µ-controller-based system for interfacing selector-less RRAM crossbar arrays.
IEEE Transactions on Electron Devices, 62 (7), .
(doi:10.1109/TED.2015.2433676).
Abstract
Selectorless crossbar arrays of resistive random access memory (RRAM), also known as memristors, conduct large sneak currents during operation, which can significantly corrupt the accuracy of cross-point analog resistance (Mt) measurements. In order to mitigate this issue, we have designed, built, and tested a memristor characterization and testing (mCAT) instrument that forces redistribution of sneak currents within the crossbar array, dramatically increasing Mt measurement accuracy. We calibrated the mCAT using a custom-made 32 × 32 discrete resistive crossbar array, and subsequently demonstrated its functionality on solid-state TiO2-x RRAM arrays, on wafer and packaged, of the same size. Our platform can measure standalone Mt in the range of 1 kΩ to 1 MΩ with <1% error. For our custom resistive crossbar, 90% of devices of the same resistance range were measured with <10% error. The platform's limitations have been quantified using large-scale nonideal crossbar simulations.
Text
mCAT_published.pdf
- Accepted Manuscript
More information
Accepted/In Press date: 13 May 2015
e-pub ahead of print date: 1 June 2015
Published date: July 2015
Keywords:
crossbars, memristors, resistive random-access memory (RRAM), sneak paths
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 384072
URI: http://eprints.soton.ac.uk/id/eprint/384072
PURE UUID: f9b34fab-936c-4653-b9c5-7f9a69bce148
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Date deposited: 14 Dec 2015 14:56
Last modified: 14 Mar 2024 21:52
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Contributors
Author:
Radu Berdan
Author:
Alexantrou Serb
Author:
Ali Khiat
Author:
Anna Regoutz
Author:
Christos Papavassiliou
Author:
Themistoklis Prodromakis
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