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A µ-controller-based system for interfacing selector-less RRAM crossbar arrays

A µ-controller-based system for interfacing selector-less RRAM crossbar arrays
A µ-controller-based system for interfacing selector-less RRAM crossbar arrays
Selectorless crossbar arrays of resistive random access memory (RRAM), also known as memristors, conduct large sneak currents during operation, which can significantly corrupt the accuracy of cross-point analog resistance (Mt) measurements. In order to mitigate this issue, we have designed, built, and tested a memristor characterization and testing (mCAT) instrument that forces redistribution of sneak currents within the crossbar array, dramatically increasing Mt measurement accuracy. We calibrated the mCAT using a custom-made 32 × 32 discrete resistive crossbar array, and subsequently demonstrated its functionality on solid-state TiO(2-x) RRAM arrays, on wafer and packaged, of the same size. Our platform can measure standalone Mt in the range of 1 kOhm to 1 MOhm with <;1% error. For our custom resistive crossbar, 90% of devices of the same resistance range were measured with <;10% error. The platform's limitations have been quantified using large-scale nonideal crossbar simulations.
crossbars, memristors, resistive random-access memory (RRAM), sneak paths
2190-2196
Berdan, Radu
e259cd5a-6e30-4439-94c0-9c44903e1e75
Serb, Alexantrou
30f5ec26-f51d-42b3-85fd-0325a27a792c
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Regoutz, Anna
5f9fa784-fea8-42f9-949f-4fe7a908f8ce
Papavassiliou, Christos
e51de0f1-db39-4e1f-ac66-8e10a2d282b9
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Berdan, Radu
e259cd5a-6e30-4439-94c0-9c44903e1e75
Serb, Alexantrou
30f5ec26-f51d-42b3-85fd-0325a27a792c
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Regoutz, Anna
5f9fa784-fea8-42f9-949f-4fe7a908f8ce
Papavassiliou, Christos
e51de0f1-db39-4e1f-ac66-8e10a2d282b9
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Berdan, Radu, Serb, Alexantrou and Khiat, Ali et al. (2015) A µ-controller-based system for interfacing selector-less RRAM crossbar arrays. IEEE Transactions on Electron Devices, 62 (7), 2190-2196. (doi:10.1109/TED.2015.2433676).

Record type: Article

Abstract

Selectorless crossbar arrays of resistive random access memory (RRAM), also known as memristors, conduct large sneak currents during operation, which can significantly corrupt the accuracy of cross-point analog resistance (Mt) measurements. In order to mitigate this issue, we have designed, built, and tested a memristor characterization and testing (mCAT) instrument that forces redistribution of sneak currents within the crossbar array, dramatically increasing Mt measurement accuracy. We calibrated the mCAT using a custom-made 32 × 32 discrete resistive crossbar array, and subsequently demonstrated its functionality on solid-state TiO(2-x) RRAM arrays, on wafer and packaged, of the same size. Our platform can measure standalone Mt in the range of 1 kOhm to 1 MOhm with <;1% error. For our custom resistive crossbar, 90% of devices of the same resistance range were measured with <;10% error. The platform's limitations have been quantified using large-scale nonideal crossbar simulations.

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mCAT_published.pdf - Accepted Manuscript
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More information

Accepted/In Press date: 13 May 2015
e-pub ahead of print date: 1 June 2015
Published date: July 2015
Keywords: crossbars, memristors, resistive random-access memory (RRAM), sneak paths
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 384072
URI: https://eprints.soton.ac.uk/id/eprint/384072
PURE UUID: f9b34fab-936c-4653-b9c5-7f9a69bce148
ORCID for Themistoklis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 14 Dec 2015 14:56
Last modified: 19 Jul 2019 00:39

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