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Electrically driven 8-14 micron band solid-state modulator

Record type: Conference or Workshop Item (Paper)

Simulation results for an electrically driven 8-14µm band, solid-state modulator based on a high purity germanium p-i-n diode are presented. Known carrier recombination mechanisms detrimental to device performance along with ways to reduce their effect are detailed.

Device simulations using 'ATLAS', indicate that modulation depths of up to 99.5% attenuation for incident infrared radiation centred at 10.6µm can be achieved by using ion-implanted device construction and optimisation of the design parameters. Preliminary transient analysis attained higher modulation frequency when transient large bias voltage (2V) is used momentarily during switching.

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Citation

Lee, C.Y. and Rutt, H.N. (2006) Electrically driven 8-14 micron band solid-state modulator At EMRS-DTC Technical Conference 2006: Electro Magnetic Remote Sensing Defence Technology Centre 2006 Conference. 13 - 14 Jul 2006. , 5pp.

More information

e-pub ahead of print date: 2006
Venue - Dates: EMRS-DTC Technical Conference 2006: Electro Magnetic Remote Sensing Defence Technology Centre 2006 Conference, 2006-07-13 - 2006-07-14
Keywords: infrared, solid-state modulator, high purity germanium, p-i-n diode

Identifiers

Local EPrints ID: 38429
URI: http://eprints.soton.ac.uk/id/eprint/38429
PURE UUID: ee6cbe9c-25cc-465c-9905-e058bc1a3897

Catalogue record

Date deposited: 22 Jun 2006
Last modified: 17 Jul 2017 15:39

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Contributors

Author: C.Y. Lee
Author: H.N. Rutt

University divisions

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