Electrically driven 8-14 micron band solid-state modulator


Lee, C.Y. and Rutt, H.N. (2006) Electrically driven 8-14 micron band solid-state modulator At EMRS-DTC Technical Conference 2006: Electro Magnetic Remote Sensing Defence Technology Centre 2006 Conference. 13 - 14 Jul 2006. , 5pp.

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Description/Abstract

Simulation results for an electrically driven 8-14µm band, solid-state modulator based on a high purity germanium p-i-n diode are presented. Known carrier recombination mechanisms detrimental to device performance along with ways to reduce their effect are detailed.

Device simulations using 'ATLAS', indicate that modulation depths of up to 99.5% attenuation for incident infrared radiation centred at 10.6µm can be achieved by using ion-implanted device construction and optimisation of the design parameters. Preliminary transient analysis attained higher modulation frequency when transient large bias voltage (2V) is used momentarily during switching.

Item Type: Conference or Workshop Item (Paper)
Venue - Dates: EMRS-DTC Technical Conference 2006: Electro Magnetic Remote Sensing Defence Technology Centre 2006 Conference, 2006-07-13 - 2006-07-14
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Keywords: infrared, solid-state modulator, high purity germanium, p-i-n diode
Subjects:
ePrint ID: 38429
Date :
Date Event
2006e-pub ahead of print
Date Deposited: 22 Jun 2006
Last Modified: 16 Apr 2017 21:58
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/38429

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