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Passively modelocked surface-emitting semiconductor lasers

Passively modelocked surface-emitting semiconductor lasers
Passively modelocked surface-emitting semiconductor lasers
This paper will review and discuss pico- and femtosecond pulse generation from passively modelocked vertical–external-cavity surface-emitting semiconductor lasers (VECSELs).We shall discuss the physical principles of ultrashort pulse generation in these lasers, considering in turn the role played by the semiconductor quantum well gain structure, and the saturable absorber. The paper will analyze the fundamental performance limits of these devices, and review the results that have been demonstrated to date. Different types of semiconductor saturable absorber mirror (SESAM) design, and their characteristic dynamics, are described in detail; exploring the ultimate goal of moving to a wafer integration approach, in which the SESAM is integrated into the VECSEL structure with tremendous gain in capability. In particular, the contrast between VECSELs and diode-pumped solid-state lasers and edge-emitting diode lasers will be discussed. Optically pumped VECSELs have led to an improvement by more than two orders of magnitude to date in the average output power achievable from a passively modelocked ultrafast semiconductor laser.
passive modelocking, semiconductor laser, saturable absorber, nonlinear propagation, nonlinear semiconductor dynamics
0370-1573
67-120
Keller, Ursula
828f17b0-9277-4e0d-9a8b-d4d9a50e1524
Tropper, Anne C.
f3505426-e0d5-4e91-aed3-aecdb44b393c
Keller, Ursula
828f17b0-9277-4e0d-9a8b-d4d9a50e1524
Tropper, Anne C.
f3505426-e0d5-4e91-aed3-aecdb44b393c

Keller, Ursula and Tropper, Anne C. (2006) Passively modelocked surface-emitting semiconductor lasers. Physics Reports, 429 (2), 67-120. (doi:10.1016/j.physrep.2006.03.004).

Record type: Article

Abstract

This paper will review and discuss pico- and femtosecond pulse generation from passively modelocked vertical–external-cavity surface-emitting semiconductor lasers (VECSELs).We shall discuss the physical principles of ultrashort pulse generation in these lasers, considering in turn the role played by the semiconductor quantum well gain structure, and the saturable absorber. The paper will analyze the fundamental performance limits of these devices, and review the results that have been demonstrated to date. Different types of semiconductor saturable absorber mirror (SESAM) design, and their characteristic dynamics, are described in detail; exploring the ultimate goal of moving to a wafer integration approach, in which the SESAM is integrated into the VECSEL structure with tremendous gain in capability. In particular, the contrast between VECSELs and diode-pumped solid-state lasers and edge-emitting diode lasers will be discussed. Optically pumped VECSELs have led to an improvement by more than two orders of magnitude to date in the average output power achievable from a passively modelocked ultrafast semiconductor laser.

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More information

Published date: 2006
Keywords: passive modelocking, semiconductor laser, saturable absorber, nonlinear propagation, nonlinear semiconductor dynamics

Identifiers

Local EPrints ID: 38476
URI: https://eprints.soton.ac.uk/id/eprint/38476
ISSN: 0370-1573
PURE UUID: 876de2ee-4386-4060-af8b-f3d114516c10

Catalogue record

Date deposited: 12 Jun 2006
Last modified: 15 Jul 2019 19:02

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