Main text:

Figure 1 No additional comments
Figure 2 No additional comments
Figure 3 No additional comments
Figure 4 No additional comments
Figure 5 No additional comments


Supplementary informations:

Figure S2 (c)

Figure represents the non-volatile resistive switching of a TiO2 memristor under positive pulsing (illustrated in inset).
At the application of each pulse, the resistance increases in a saturating fashion.




Figure S8

The figure is split into 4 panels:

TOP left (STP_highC.xlsx): represents repeated volatile resistive switching (RS) with a STP-F characteristic happening at a high average conductance;
TOP right (STD_highC.xlsx): represents repeated volatile RS with a STP-S characteristic happening at a high average conductance;

BOTTOM left (STP_lowC.xlsx): represents repeated volatile RS with a STP-F characteristic happening at a low average conductance;
BOTTOM right (STD_lowC.xlsx): represents repeated volatile RS with a STP-S characteristic happening at a low average conductance;




Figure S9:

Figure shows probabilistic expression of STP-F and STP-S events in (%) per conductance bin.




Figure S10

Figure shows conductance decay right after the application of a train of 2 voltage pulses of -4V, 10us, at different interpulse timings:
a: 200ms;
b: 100ms;
c: 80ms;
d: 60ms;
e: 40ms;
f: 20ms;

Data is fitted with the model described in supplementary information.




Figure S12:

Figure_S12b : represents the cummulative results of the neuron spiking probability for each event and for 2 separate "Runs" described in supplementary information;

The raw data below contains the neuron membrane voltage measured during the application of each event.
Figure_S12c : contains an example of Event 1 where the neuron doesn't spike;
Figure_S12e : contains an example of Event 3 where the neuron doesn't spike;