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An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margin

An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margin
An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margin
Resistive random access memory (ReRAM) crossbar arrays have become one of the most promising candidates for next-generation non volatile memories. To become a mature technology, the sneak path current issue must be solved without compromising all the advantages that crossbars offer in terms of electrical performances and fabrication complexity. Here, we present a highly integrable access device based on nickel and sub-stoichiometric amorphous titanium dioxide (TiO2?x), in a metal insulator metal crossbar structure. The high voltage margin of 3?V, amongst the highest reported for monolayer selector devices, and the good current density of 104?A/cm2 make it suitable to sustain ReRAM read and write operations, effectively tackling sneak currents in crossbars without compromising fabrication complexity in a 1 Selector 1 Resistor (1S1R) architecture. Furthermore, the voltage margin is found to be tunable by an annealing step without affecting the device'scharacteristics.
0003-6951
1-4
Cortese, Simone
11e9dba1-e712-4dd7-940f-b6609b3be3d4
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Carta, Daniela
120de978-2aaa-4b4d-bf5f-3625c503040d
Light, Mark E.
cf57314e-6856-491b-a8d2-2dffc452e161
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Cortese, Simone
11e9dba1-e712-4dd7-940f-b6609b3be3d4
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Carta, Daniela
120de978-2aaa-4b4d-bf5f-3625c503040d
Light, Mark E.
cf57314e-6856-491b-a8d2-2dffc452e161
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Cortese, Simone, Khiat, Ali and Carta, Daniela et al. (2016) An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margin. Applied Physics Letters, 108 (3), 1-4. (doi:10.1063/1.4940361).

Record type: Article

Abstract

Resistive random access memory (ReRAM) crossbar arrays have become one of the most promising candidates for next-generation non volatile memories. To become a mature technology, the sneak path current issue must be solved without compromising all the advantages that crossbars offer in terms of electrical performances and fabrication complexity. Here, we present a highly integrable access device based on nickel and sub-stoichiometric amorphous titanium dioxide (TiO2?x), in a metal insulator metal crossbar structure. The high voltage margin of 3?V, amongst the highest reported for monolayer selector devices, and the good current density of 104?A/cm2 make it suitable to sustain ReRAM read and write operations, effectively tackling sneak currents in crossbars without compromising fabrication complexity in a 1 Selector 1 Resistor (1S1R) architecture. Furthermore, the voltage margin is found to be tunable by an annealing step without affecting the device'scharacteristics.

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Accepted/In Press date: 3 January 2016
e-pub ahead of print date: 18 January 2016
Published date: 18 January 2016
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 384818
URI: https://eprints.soton.ac.uk/id/eprint/384818
ISSN: 0003-6951
PURE UUID: f4bcf162-2e38-49ab-9c71-9c4dbabb190b
ORCID for Mark E. Light: ORCID iD orcid.org/0000-0002-0585-0843
ORCID for Themistoklis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

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Date deposited: 21 Jan 2016 16:10
Last modified: 03 Dec 2019 01:55

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Contributors

Author: Simone Cortese
Author: Ali Khiat
Author: Daniela Carta
Author: Mark E. Light ORCID iD

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