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Engineering the switching dynamics of TiOx-based RRAM with Al doping

Engineering the switching dynamics of TiOx-based RRAM with Al doping
Engineering the switching dynamics of TiOx-based RRAM with Al doping
Titanium oxide (TiOx) has attracted a lot of attention as an active material for resistive random access memory (RRAM), due to its versatility and variety of possible crystal phases. Although existing RRAM materials have demonstrated impressive characteristics, like ultra-fast switching and high cycling endurance, this technology still encounters challenges like low yields, large variability of switching characteristics, and ultimately device failure. Electroforming has been often considered responsible for introducing irreversible damage to devices, with high switching voltages contributing to device degradation. In this paper, we have employed Al doping for tuning the resistive switching characteristics of titanium oxide RRAM. The resistive switching threshold voltages of undoped and Al-doped TiOx thin films were first assessed by conductive atomic force microscopy. The thin films were then transferred in RRAM devices and tested with voltage pulse sweeping, demonstrating that the Al-doped devices could on average form at lower potentials compared to the undoped ones and could support both analog and binary switching at potentials as low as 0.9?V. This work demonstrates a potential pathway for implementing low-power RRAM systems.
0021-8979
Trapatseli, Maria
1aea9f6b-2790-48b4-85d5-e600e60f6406
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Cortese, Simone
11e9dba1-e712-4dd7-940f-b6609b3be3d4
Serb, Alexander
30f5ec26-f51d-42b3-85fd-0325a27a792c
Carta, Daniela
120de978-2aaa-4b4d-bf5f-3625c503040d
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Trapatseli, Maria
1aea9f6b-2790-48b4-85d5-e600e60f6406
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Cortese, Simone
11e9dba1-e712-4dd7-940f-b6609b3be3d4
Serb, Alexander
30f5ec26-f51d-42b3-85fd-0325a27a792c
Carta, Daniela
120de978-2aaa-4b4d-bf5f-3625c503040d
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Trapatseli, Maria, Khiat, Ali and Cortese, Simone et al. (2016) Engineering the switching dynamics of TiOx-based RRAM with Al doping. Journal of Applied Physics, 120. (doi:10.1063/1.4958672).

Record type: Article

Abstract

Titanium oxide (TiOx) has attracted a lot of attention as an active material for resistive random access memory (RRAM), due to its versatility and variety of possible crystal phases. Although existing RRAM materials have demonstrated impressive characteristics, like ultra-fast switching and high cycling endurance, this technology still encounters challenges like low yields, large variability of switching characteristics, and ultimately device failure. Electroforming has been often considered responsible for introducing irreversible damage to devices, with high switching voltages contributing to device degradation. In this paper, we have employed Al doping for tuning the resistive switching characteristics of titanium oxide RRAM. The resistive switching threshold voltages of undoped and Al-doped TiOx thin films were first assessed by conductive atomic force microscopy. The thin films were then transferred in RRAM devices and tested with voltage pulse sweeping, demonstrating that the Al-doped devices could on average form at lower potentials compared to the undoped ones and could support both analog and binary switching at potentials as low as 0.9?V. This work demonstrates a potential pathway for implementing low-power RRAM systems.

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More information

Submitted date: 4 March 2016
Accepted/In Press date: 30 June 2016
e-pub ahead of print date: 11 July 2016
Published date: 14 July 2016
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 385146
URI: https://eprints.soton.ac.uk/id/eprint/385146
ISSN: 0021-8979
PURE UUID: 50359cc5-ff1b-4bca-98ae-fc4d9630759b
ORCID for Themis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 15 Jan 2016 16:25
Last modified: 03 Dec 2019 01:36

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