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Role and optimization of the active oxide layer in TiO2-based RRAM

Role and optimization of the active oxide layer in TiO2-based RRAM
Role and optimization of the active oxide layer in TiO2-based RRAM
TiO2 is commonly used as the active switching layer in resistive random access memory (RRAM). The electrical characteristics of these devices are directly related to the fundamental conditions inside the TiO2 layer and at the interfaces between it and the surrounding electrodes. However, it is complex to disentangle the effects of film “bulk” properties and interface phenomena. The present work uses hard X-ray photoemission spectroscopy (HAXPES) at different excitation energies to distinguish between these regimes. Changes are found to affect the entire thin film, but the most dramatic effects are confined to an interface. These changes are connected to oxygen ions moving and redistributing within the film. Based on the HAXPES results, post-deposition annealing of the TiO2 thin film was investigated as a possible optimisation pathway in order to reach an ideal compromise between device resistivity and lifetime. The structural and chemical changes upon annealing are investigated using X-ray absorption spectroscopy (XAS) and are further supported by a range of bulk and surface sensitive characterisation methods. In summary, it is shown that the management of oxygen content and interface quality is intrinsically important to device behaviour and that careful annealing procedures are a powerful device optimisation technique.
University of Southampton
REGOUTZ, ANNA
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Gupta, Isha
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Serb, Alexantrou
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Khiat, Ali
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Borgatti, F
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Lee, T.
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Schlueter, C.
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Torelli, P.
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Gobaut, B.
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Light, Mark
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CARTA, DANIELA
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PEARCE, STUART
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Panaccione, G.
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Prodromakis, Themistoklis
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REGOUTZ, ANNA
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Gupta, Isha
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Serb, Alexantrou
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Khiat, Ali
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Borgatti, F
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Lee, T.
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Schlueter, C.
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Torelli, P.
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Gobaut, B.
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Light, Mark
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CARTA, DANIELA
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PEARCE, STUART
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Panaccione, G.
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Prodromakis, Themistoklis
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REGOUTZ, ANNA, Gupta, Isha, Serb, Alexantrou, Khiat, Ali, Borgatti, F, Lee, T., Schlueter, C., Torelli, P., Gobaut, B., Light, Mark, CARTA, DANIELA, PEARCE, STUART, Panaccione, G. and Prodromakis, Themistoklis (2015) Role and optimization of the active oxide layer in TiO2-based RRAM. University of Southampton doi:10.5258/SOTON/385174 [Dataset]

Record type: Dataset

Abstract

TiO2 is commonly used as the active switching layer in resistive random access memory (RRAM). The electrical characteristics of these devices are directly related to the fundamental conditions inside the TiO2 layer and at the interfaces between it and the surrounding electrodes. However, it is complex to disentangle the effects of film “bulk” properties and interface phenomena. The present work uses hard X-ray photoemission spectroscopy (HAXPES) at different excitation energies to distinguish between these regimes. Changes are found to affect the entire thin film, but the most dramatic effects are confined to an interface. These changes are connected to oxygen ions moving and redistributing within the film. Based on the HAXPES results, post-deposition annealing of the TiO2 thin film was investigated as a possible optimisation pathway in order to reach an ideal compromise between device resistivity and lifetime. The structural and chemical changes upon annealing are investigated using X-ray absorption spectroscopy (XAS) and are further supported by a range of bulk and surface sensitive characterisation methods. In summary, it is shown that the management of oxygen content and interface quality is intrinsically important to device behaviour and that careful annealing procedures are a powerful device optimisation technique.

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Published date: 2015
Organisations: Nanoelectronics and Nanotechnology, Electronics & Computer Science, Characterisation and Analytics
Projects:
Reliably unreliable nanotechnologies
Funded by: UNSPECIFIED (EP/K017829/1)
2 September 2013 to 1 September 2018

Identifiers

Local EPrints ID: 385174
URI: https://eprints.soton.ac.uk/id/eprint/385174
PURE UUID: e1f54302-80e2-4f4e-beec-5123e87b6a14
ORCID for Mark Light: ORCID iD orcid.org/0000-0002-0585-0843
ORCID for Themistoklis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 17 Dec 2015 10:04
Last modified: 06 Jun 2018 12:54

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Contributors

Creator: ANNA REGOUTZ
Creator: Isha Gupta
Creator: Alexantrou Serb
Creator: Ali Khiat
Creator: F Borgatti
Creator: T. Lee
Creator: C. Schlueter
Creator: P. Torelli
Creator: B. Gobaut
Creator: Mark Light ORCID iD
Creator: DANIELA CARTA
Creator: STUART PEARCE
Creator: G. Panaccione

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