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Tailoring of the trap distribution and crystal field in Cr3+-doped non-gallate phosphors with near-infrared long-persistence phosphorescence

Tailoring of the trap distribution and crystal field in Cr3+-doped non-gallate phosphors with near-infrared long-persistence phosphorescence
Tailoring of the trap distribution and crystal field in Cr3+-doped non-gallate phosphors with near-infrared long-persistence phosphorescence
We present a series of efficient near-infrared (NIR) Cr3+-doped non-gallate long-persistence phosphors (Zn2SnO4: Cr and Zn(2-x)Al2xSn(1-x)O4: Cr) and highlight their special optical characteristics of broad emission band (650-1200 nm, peaking at 800 nm) and long afterglow duration (>35h). In the context of materials selection, these systems successfully avoid the existing ubiquitous reliance on gallates as hosts in Cr3+-doped phosphorescent phosphors. Zn2SnO4 is employed as a host to take advantage of its characteristic inverse spinel crystal structure, easy substitution into Zn2+ and Sn4+ sites by Cr3+ in distorted octahedral coordination and non-equivalent substitution. In this work, Al dopant was introduced both to precisely tailor the local crystal field around the activator center, Cr3+, and to redeploy trap distribution in the system. Indeed, such redeployment permits band gap adjustment and the dynamic variation of the annihilation and the formation of defects. The results demonstrate that the method employed here can be an effective way to fabricate multi-wavelength, low-cost, NIR phosphorescent phosphors with many potential multifunctional bio-imaging applications.
1884-4049
1-11
Li, Y.
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Chen, R.
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Sharafudeen, K.
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Zhou, S.
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Gecevičius, M.
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Wang, H.
d23f04f1-a300-4744-bd98-2df77c7047df
Dong, G.
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Wu, Y.
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Qin, X.
1f8f0620-554e-42f0-8744-551a0af4f5bd
Qiu, J.
45a8b2f4-9b82-447c-8bcf-7c01238ab774
Li, Y.
4bcf8aa8-5763-4e62-ad14-16da86b82da8
Chen, R.
08f4fdc2-6244-48e5-a642-cb9e2641531c
Sharafudeen, K.
1aeb76c5-f660-43d4-a086-a6f58e119186
Zhou, S.
0e8ef730-0e29-4f23-a90a-9808fc609638
Gecevičius, M.
271576ee-dd9d-40b3-ab2f-19686b91dc64
Wang, H.
d23f04f1-a300-4744-bd98-2df77c7047df
Dong, G.
86f8d129-be83-4338-97a9-21c8fc60a1d5
Wu, Y.
84854e37-ada6-4cc8-995f-6ce5ebc77423
Qin, X.
1f8f0620-554e-42f0-8744-551a0af4f5bd
Qiu, J.
45a8b2f4-9b82-447c-8bcf-7c01238ab774

Li, Y., Chen, R., Sharafudeen, K., Zhou, S., Gecevičius, M., Wang, H., Dong, G., Wu, Y., Qin, X. and Qiu, J. (2015) Tailoring of the trap distribution and crystal field in Cr3+-doped non-gallate phosphors with near-infrared long-persistence phosphorescence. NPG Asia Materials, 7 (e180), 1-11. (doi:10.1038/am.2015.38).

Record type: Article

Abstract

We present a series of efficient near-infrared (NIR) Cr3+-doped non-gallate long-persistence phosphors (Zn2SnO4: Cr and Zn(2-x)Al2xSn(1-x)O4: Cr) and highlight their special optical characteristics of broad emission band (650-1200 nm, peaking at 800 nm) and long afterglow duration (>35h). In the context of materials selection, these systems successfully avoid the existing ubiquitous reliance on gallates as hosts in Cr3+-doped phosphorescent phosphors. Zn2SnO4 is employed as a host to take advantage of its characteristic inverse spinel crystal structure, easy substitution into Zn2+ and Sn4+ sites by Cr3+ in distorted octahedral coordination and non-equivalent substitution. In this work, Al dopant was introduced both to precisely tailor the local crystal field around the activator center, Cr3+, and to redeploy trap distribution in the system. Indeed, such redeployment permits band gap adjustment and the dynamic variation of the annihilation and the formation of defects. The results demonstrate that the method employed here can be an effective way to fabricate multi-wavelength, low-cost, NIR phosphorescent phosphors with many potential multifunctional bio-imaging applications.

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Accepted/In Press date: 19 March 2015
Published date: 22 May 2015
Venue - Dates: NPG Asia Materials 2015, 2015-03-19
Organisations: Optoelectronics Research Centre

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Local EPrints ID: 385517
URI: https://eprints.soton.ac.uk/id/eprint/385517
ISSN: 1884-4049
PURE UUID: 6c182246-08bc-462d-817f-be086a9ab7cf

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Date deposited: 13 Jan 2016 11:26
Last modified: 19 Jul 2019 20:22

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Contributors

Author: Y. Li
Author: R. Chen
Author: K. Sharafudeen
Author: S. Zhou
Author: M. Gecevičius
Author: H. Wang
Author: G. Dong
Author: Y. Wu
Author: X. Qin
Author: J. Qiu

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