Sensor based on the mode-localization effect in electrostatically-coupled MEMS resonators fabricated using an SOI process
Sensor based on the mode-localization effect in electrostatically-coupled MEMS resonators fabricated using an SOI process
The mode-localization effect exhibited in electrostatically-coupled microelectromechanical systems (MEMS) resonators was demonstrated using a pair of rectangular clamped-clamped beams that were fabricated using a silicon-on-insulator (SOI) based process. The response of the amplitude ratio of the resonating beams at the fundamental mode frequencies to a change in the stiffness of one of the beams was characterized. Beams with different widths were fabricated and tested, with up to 13 times improvement in sensitivity to relative stiffness change being reported for a device with 20 ?????? widths, compared to 10 ?????? widths. In addition, when compared to the state-of-the-art, the devices reported up to 2.8 times improvement in sensitivity.
Wood, Graham
61de1458-e7f5-4712-925a-a95bb44580ee
Zhao, Chun
00e81968-02a9-4b1c-8b63-97aa9fbfd4e9
Pu, Suan-Hui
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Sari, Ibrahim
cdcb1265-4a94-4c5a-b8b1-f1ca7e6759d7
Kraft, Michael
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1 November 2015
Wood, Graham
61de1458-e7f5-4712-925a-a95bb44580ee
Zhao, Chun
00e81968-02a9-4b1c-8b63-97aa9fbfd4e9
Pu, Suan-Hui
8b46b970-56fd-4a4e-8688-28668f648f43
Sari, Ibrahim
cdcb1265-4a94-4c5a-b8b1-f1ca7e6759d7
Kraft, Michael
54927621-738f-4d40-af56-a027f686b59f
Wood, Graham, Zhao, Chun, Pu, Suan-Hui, Sari, Ibrahim and Kraft, Michael
(2015)
Sensor based on the mode-localization effect in electrostatically-coupled MEMS resonators fabricated using an SOI process.
14th IEEE Sensors Conference, Busan, Korea, Republic of.
01 - 04 Nov 2015.
4 pp
.
(doi:10.1109/ICSENS.2015.7370338).
Record type:
Conference or Workshop Item
(Paper)
Abstract
The mode-localization effect exhibited in electrostatically-coupled microelectromechanical systems (MEMS) resonators was demonstrated using a pair of rectangular clamped-clamped beams that were fabricated using a silicon-on-insulator (SOI) based process. The response of the amplitude ratio of the resonating beams at the fundamental mode frequencies to a change in the stiffness of one of the beams was characterized. Beams with different widths were fabricated and tested, with up to 13 times improvement in sensitivity to relative stiffness change being reported for a device with 20 ?????? widths, compared to 10 ?????? widths. In addition, when compared to the state-of-the-art, the devices reported up to 2.8 times improvement in sensitivity.
Text
4page_sensors_abstract.pdf
- Accepted Manuscript
More information
Published date: 1 November 2015
Venue - Dates:
14th IEEE Sensors Conference, Busan, Korea, Republic of, 2015-11-01 - 2015-11-04
Organisations:
Nanoelectronics and Nanotechnology, Engineering Science Unit
Identifiers
Local EPrints ID: 385641
URI: http://eprints.soton.ac.uk/id/eprint/385641
PURE UUID: 1016d571-a992-4aa8-a4e6-287eb165e8ea
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Date deposited: 12 Jan 2016 15:05
Last modified: 15 Mar 2024 04:02
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Contributors
Author:
Graham Wood
Author:
Chun Zhao
Author:
Ibrahim Sari
Author:
Michael Kraft
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