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Predictions of free-carrier electroabsorption and electrorefraction in germanium

Predictions of free-carrier electroabsorption and electrorefraction in germanium
Predictions of free-carrier electroabsorption and electrorefraction in germanium
Germanium is becoming an important material for mid-infrared photonics, but the modulation mechanisms in Ge are not yet well understood. In this paper, we estimate the size of free-carrier electroabsorption and electrorefraction effects in germanium across the 2 to 16 µm wavelength range at 300 K. The predictions are based as much as possible upon experimental absorption data from the literature and are supported by extrapolations from experimental data using first-principle quantum theoretical modeling. We find that free-carrier absorption is substantially stronger in Ge than in Si.
electrooptic effects, photonics
1943-0655
1-14
Nedeljković, Miloš
b64e21c2-1b95-479d-a35c-3456dff8c796
Soref, Richard
544d13a2-3d65-4ecf-9763-74e72d9e947a
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Nedeljković, Miloš
b64e21c2-1b95-479d-a35c-3456dff8c796
Soref, Richard
544d13a2-3d65-4ecf-9763-74e72d9e947a
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051

Nedeljković, Miloš, Soref, Richard and Mashanovich, Goran Z. (2015) Predictions of free-carrier electroabsorption and electrorefraction in germanium. IEEE Photonics Journal, 7 (3), 1-14, [2600214]. (doi:10.1109/JPHOT.2015.2419217).

Record type: Article

Abstract

Germanium is becoming an important material for mid-infrared photonics, but the modulation mechanisms in Ge are not yet well understood. In this paper, we estimate the size of free-carrier electroabsorption and electrorefraction effects in germanium across the 2 to 16 µm wavelength range at 300 K. The predictions are based as much as possible upon experimental absorption data from the literature and are supported by extrapolations from experimental data using first-principle quantum theoretical modeling. We find that free-carrier absorption is substantially stronger in Ge than in Si.

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Accepted/In Press date: 31 March 2015
e-pub ahead of print date: 24 April 2015
Published date: 1 June 2015
Keywords: electrooptic effects, photonics
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 385690
URI: http://eprints.soton.ac.uk/id/eprint/385690
ISSN: 1943-0655
PURE UUID: 45064692-0ed2-42af-be8a-947798fe4761
ORCID for Miloš Nedeljković: ORCID iD orcid.org/0000-0002-9170-7911
ORCID for Goran Z. Mashanovich: ORCID iD orcid.org/0000-0003-2954-5138

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Date deposited: 13 Jan 2016 11:36
Last modified: 29 Oct 2024 02:45

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Contributors

Author: Miloš Nedeljković ORCID iD
Author: Richard Soref
Author: Goran Z. Mashanovich ORCID iD

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