Optical properties of 2D fractional Talbot patterns under coherent EUV illumination
Optical properties of 2D fractional Talbot patterns under coherent EUV illumination
 
  We investigate optical properties of (2D) fractional Talbot patterns under illumination with EUV laser light. The fractional Talbot effect, due to spatial frequency multiplication, can enable patterning of micro and nano-structures with various feature sizes using a micro-scale pitch mask. The experiment is performed with a free-standing mask fabricated by focused ion beam milling and a highly coherent illumination at 46.9 nm wavelength generated by a compact capillary discharge Ne-like Argon laser. As a result of spatial frequency multiplication, structure density of a square array of apertures in the mask was increased by a factor of up to 9 at the recording plane. The depth of field of the fractional Talbot images has been investigated using Fresnel diffraction analysis. Added field distribution complexity caused by asymmetry of the 2D arrays was observed both in simulation and in the experiment. This approach could be useful for sub-micron structuring of 2D patterns for various applications including among others the fabrication of photonic crystals, quantum dots, and also of submicron-electronic devices.
  
  
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      Kim, Hyun-su
      
        39359bf5-7ed4-4524-ba57-f8ce78468b5a
      
     
  
    
      Li, W.
      
        df7f882b-64c1-41ca-9ff6-bafa6a24ca42
      
     
  
    
      Danylyuk, S.
      
        7a8e1260-ec7b-4ce2-b693-9b0eab534272
      
     
  
    
      Brocklesby, W.S.
      
        c53ca2f6-db65-4e19-ad00-eebeb2e6de67
      
     
  
    
      Marconi, M.C.
      
        98f01ce7-23e7-44dc-9609-e5ab692078ba
      
     
  
    
      Juschkin, L.
      
        9aab7dc5-7599-48e1-93f8-77ea7adf4687
      
     
  
  
   
  
  
    
    
  
    
      21 August 2015
    
    
  
  
    
      Kim, Hyun-su
      
        39359bf5-7ed4-4524-ba57-f8ce78468b5a
      
     
  
    
      Li, W.
      
        df7f882b-64c1-41ca-9ff6-bafa6a24ca42
      
     
  
    
      Danylyuk, S.
      
        7a8e1260-ec7b-4ce2-b693-9b0eab534272
      
     
  
    
      Brocklesby, W.S.
      
        c53ca2f6-db65-4e19-ad00-eebeb2e6de67
      
     
  
    
      Marconi, M.C.
      
        98f01ce7-23e7-44dc-9609-e5ab692078ba
      
     
  
    
      Juschkin, L.
      
        9aab7dc5-7599-48e1-93f8-77ea7adf4687
      
     
  
       
    
 
  
    
      
  
  
  
  
  
  
    Kim, Hyun-su, Li, W., Danylyuk, S., Brocklesby, W.S., Marconi, M.C. and Juschkin, L.
  
  
  
  
   
    (2015)
  
  
    
    Optical properties of 2D fractional Talbot patterns under coherent EUV illumination.
  
  
  
  
    Journal of Physics D: Applied Physics, 48 (37), .
  
   (doi:10.1088/0022-3727/48/37/375101). 
  
  
   
  
  
  
  
  
   
  
    
      
        
          Abstract
          We investigate optical properties of (2D) fractional Talbot patterns under illumination with EUV laser light. The fractional Talbot effect, due to spatial frequency multiplication, can enable patterning of micro and nano-structures with various feature sizes using a micro-scale pitch mask. The experiment is performed with a free-standing mask fabricated by focused ion beam milling and a highly coherent illumination at 46.9 nm wavelength generated by a compact capillary discharge Ne-like Argon laser. As a result of spatial frequency multiplication, structure density of a square array of apertures in the mask was increased by a factor of up to 9 at the recording plane. The depth of field of the fractional Talbot images has been investigated using Fresnel diffraction analysis. Added field distribution complexity caused by asymmetry of the 2D arrays was observed both in simulation and in the experiment. This approach could be useful for sub-micron structuring of 2D patterns for various applications including among others the fabrication of photonic crystals, quantum dots, and also of submicron-electronic devices.
        
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  More information
  
    
      Accepted/In Press date: 27 July 2015
 
    
      Published date: 21 August 2015
 
    
  
  
    
  
    
  
    
  
    
  
    
  
    
  
    
     
        Organisations:
        Optoelectronics Research Centre
      
    
  
    
  
  
        Identifiers
        Local EPrints ID: 385692
        URI: http://eprints.soton.ac.uk/id/eprint/385692
        
          
        
        
        
          ISSN: 0022-3727
        
        
          PURE UUID: 77fe0ee3-ec20-4d92-bc52-7969622f1402
        
  
    
        
          
            
          
        
    
        
          
        
    
        
          
        
    
        
          
            
              
            
          
        
    
        
          
        
    
        
          
        
    
  
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  Date deposited: 13 Jan 2016 11:01
  Last modified: 15 Mar 2024 02:41
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      Contributors
      
          
          Author:
          
            
              
              
                Hyun-su Kim
              
              
            
            
          
        
      
          
          Author:
          
            
            
              W. Li
            
          
        
      
          
          Author:
          
            
            
              S. Danylyuk
            
          
        
      
        
      
          
          Author:
          
            
            
              M.C. Marconi
            
          
        
      
          
          Author:
          
            
            
              L. Juschkin
            
          
        
      
      
      
    
  
   
  
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