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Low current consuming thermally stable sulphide phase change memory

Low current consuming thermally stable sulphide phase change memory
Low current consuming thermally stable sulphide phase change memory
We show that phase change media based on the gallium and lanthanum chalcogenides can outperform the well know benchmark performance of germanium antimony telluride devices in two key specifications thermal stability and power consumption. Through the fabrication and characterisation of identical nanoscale gallium lanthanum sulphide and germanium antimony telluride based devices, we show that the former compounds offer lower current consumption, while still exhibiting a relatively high resistance in both phases and high resistance contrast between phases, comparable to an equivalent germanium antimony telluride device. We also demonstrate that these sulphide-based devices continue to display a measurable threshold and retain information at temperatures above 500°C, considerably outperforming conventional telluride based devices.
4763-4769
Gholipour, B.
c17bd62d-9df6-40e6-bc42-65272d97e559
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Gholipour, B.
c17bd62d-9df6-40e6-bc42-65272d97e559
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0

Gholipour, B., Huang, C.C. and Hewak, D.W. (2015) Low current consuming thermally stable sulphide phase change memory. Journal of Materials Science: Materials in Electronics, 26 (7), 4763-4769. (doi:10.1007/s10854-015-3089-x).

Record type: Article

Abstract

We show that phase change media based on the gallium and lanthanum chalcogenides can outperform the well know benchmark performance of germanium antimony telluride devices in two key specifications thermal stability and power consumption. Through the fabrication and characterisation of identical nanoscale gallium lanthanum sulphide and germanium antimony telluride based devices, we show that the former compounds offer lower current consumption, while still exhibiting a relatively high resistance in both phases and high resistance contrast between phases, comparable to an equivalent germanium antimony telluride device. We also demonstrate that these sulphide-based devices continue to display a measurable threshold and retain information at temperatures above 500°C, considerably outperforming conventional telluride based devices.

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More information

Accepted/In Press date: 17 April 2015
e-pub ahead of print date: 24 April 2015
Published date: July 2015
Organisations: Optoelectronics Research Centre

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Local EPrints ID: 386155
URI: https://eprints.soton.ac.uk/id/eprint/386155
PURE UUID: 6a7e4ff6-b803-4471-a67c-2e256b1006f7
ORCID for C.C. Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 20 Jan 2016 15:16
Last modified: 20 Jul 2019 01:21

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Contributors

Author: B. Gholipour
Author: C.C. Huang ORCID iD
Author: D.W. Hewak ORCID iD

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