A high-performance accelerometer with a fifth-order sigma-delta modulator
A high-performance accelerometer with a fifth-order sigma-delta modulator
To verify the effectiveness of a higher order electromechanical sigma–delta modulator (ΣΔM), a micromachined accelerometer is fabricated. The in-plane sensor with fully differential structure has a mechanical noise floor below 1 µg Hz-1/2, static sensitivity 16 pF g-1 and resonant frequency 325 Hz. FEM analyses are performed to verify these key parameters. The silicon-on-glass sensor is fabricated by deep reactive ion etching (DRIE) and anodic bonding. Compared with a second-order electromechanical ΣΔM, which only uses the sensing element as a loop filter, here it is cascaded with additional electronic integrators to form a fifth-order electromechanical ΣΔM, which leads to better signal to quantization noise ratio (SQNR). This novel approach is analysed and system level simulations are presented. A printed circuit board (PCB) prototype of this high-order ΣΔM loop was built and tested. The experimental data agree well with the simulation results.
S22-S29
Dong, Yufeng
08820198-3144-4e9e-9ae8-3a81d801f3c5
Kraft, Michael
54927621-738f-4d40-af56-a027f686b59f
Gollasch, Carsten
71abfea4-4214-4bbe-9c2e-50d54269952f
Redman-White, William
d5376167-c925-460f-8e9c-13bffda8e0bf
20 June 2005
Dong, Yufeng
08820198-3144-4e9e-9ae8-3a81d801f3c5
Kraft, Michael
54927621-738f-4d40-af56-a027f686b59f
Gollasch, Carsten
71abfea4-4214-4bbe-9c2e-50d54269952f
Redman-White, William
d5376167-c925-460f-8e9c-13bffda8e0bf
Dong, Yufeng, Kraft, Michael, Gollasch, Carsten and Redman-White, William
(2005)
A high-performance accelerometer with a fifth-order sigma-delta modulator.
Journal of Micromechanics and Microengineering, 15 (7), .
(doi:10.1088/0960-1317/15/7/004).
Abstract
To verify the effectiveness of a higher order electromechanical sigma–delta modulator (ΣΔM), a micromachined accelerometer is fabricated. The in-plane sensor with fully differential structure has a mechanical noise floor below 1 µg Hz-1/2, static sensitivity 16 pF g-1 and resonant frequency 325 Hz. FEM analyses are performed to verify these key parameters. The silicon-on-glass sensor is fabricated by deep reactive ion etching (DRIE) and anodic bonding. Compared with a second-order electromechanical ΣΔM, which only uses the sensing element as a loop filter, here it is cascaded with additional electronic integrators to form a fifth-order electromechanical ΣΔM, which leads to better signal to quantization noise ratio (SQNR). This novel approach is analysed and system level simulations are presented. A printed circuit board (PCB) prototype of this high-order ΣΔM loop was built and tested. The experimental data agree well with the simulation results.
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Published date: 20 June 2005
Identifiers
Local EPrints ID: 38625
URI: http://eprints.soton.ac.uk/id/eprint/38625
ISSN: 0960-1317
PURE UUID: 14670d0f-4cc8-4c02-9162-6b9d01cea511
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Date deposited: 15 Jun 2006
Last modified: 15 Mar 2024 08:08
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Contributors
Author:
Yufeng Dong
Author:
Michael Kraft
Author:
Carsten Gollasch
Author:
William Redman-White
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