Photo-induced optical activity in phase-change memory materials
Photo-induced optical activity in phase-change memory materials
We demonstrate that optical activity in amorphous isotropic thin films of pure Ge2Sb2Te5 and N-doped Ge2Sb2Te5N phase-change memory materials can be induced using rapid photo crystallisation with circularly polarised laser light. The new anisotropic phase transition has been confirmed by circular dichroism measurements. This opens up the possibility of controlled induction of optical activity at the nanosecond time scale for exploitation in a new generation of high-density optical memory, fast chiroptical switches and chiral metamaterials.
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Borisenko, Konstantin B.
14a5a6c2-facf-4719-9290-65fdf664d81f
Shanmugam, Janaki
418f0ad3-62c2-436b-8d61-5227d171a52e
Williams, Benjamin A.O.
d5d9ef5a-6ea7-40f8-9123-878dd45be24c
Ewart, Paul
575952d2-3d2a-41d0-a2fc-4550fe2db03a
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Hussain, Rohanah
d46302e5-4734-4f59-9ac1-bc7b1f62693c
Jávorfi, Tamás
6a48475f-99b9-4661-9b53-0c9a2e62779f
Siligardi, Giuliano
ebce490a-2faa-4b98-9703-ae0d6f8e46c2
Kirkland, Angus I.
bf904d4f-d98b-46d2-8863-3a0a97dae8a3
5 March 2015
Borisenko, Konstantin B.
14a5a6c2-facf-4719-9290-65fdf664d81f
Shanmugam, Janaki
418f0ad3-62c2-436b-8d61-5227d171a52e
Williams, Benjamin A.O.
d5d9ef5a-6ea7-40f8-9123-878dd45be24c
Ewart, Paul
575952d2-3d2a-41d0-a2fc-4550fe2db03a
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Hussain, Rohanah
d46302e5-4734-4f59-9ac1-bc7b1f62693c
Jávorfi, Tamás
6a48475f-99b9-4661-9b53-0c9a2e62779f
Siligardi, Giuliano
ebce490a-2faa-4b98-9703-ae0d6f8e46c2
Kirkland, Angus I.
bf904d4f-d98b-46d2-8863-3a0a97dae8a3
Borisenko, Konstantin B., Shanmugam, Janaki, Williams, Benjamin A.O., Ewart, Paul, Gholipour, Behrad, Hewak, Daniel W., Hussain, Rohanah, Jávorfi, Tamás, Siligardi, Giuliano and Kirkland, Angus I.
(2015)
Photo-induced optical activity in phase-change memory materials.
Scientific Reports, 5 (8770), .
(doi:10.1038/srep08770).
Abstract
We demonstrate that optical activity in amorphous isotropic thin films of pure Ge2Sb2Te5 and N-doped Ge2Sb2Te5N phase-change memory materials can be induced using rapid photo crystallisation with circularly polarised laser light. The new anisotropic phase transition has been confirmed by circular dichroism measurements. This opens up the possibility of controlled induction of optical activity at the nanosecond time scale for exploitation in a new generation of high-density optical memory, fast chiroptical switches and chiral metamaterials.
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srep08770.pdf
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Accepted/In Press date: 27 January 2015
Published date: 5 March 2015
Organisations:
Optoelectronics Research Centre
Identifiers
Local EPrints ID: 386330
URI: http://eprints.soton.ac.uk/id/eprint/386330
PURE UUID: 078bcb0a-0131-45fc-9379-f28604765a2f
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Date deposited: 22 Jan 2016 15:38
Last modified: 14 Mar 2024 22:30
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Contributors
Author:
Konstantin B. Borisenko
Author:
Janaki Shanmugam
Author:
Benjamin A.O. Williams
Author:
Paul Ewart
Author:
Behrad Gholipour
Author:
Rohanah Hussain
Author:
Tamás Jávorfi
Author:
Giuliano Siligardi
Author:
Angus I. Kirkland
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