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Photo-induced optical activity in phase-change memory materials

Photo-induced optical activity in phase-change memory materials
Photo-induced optical activity in phase-change memory materials
We demonstrate that optical activity in amorphous isotropic thin films of pure Ge2Sb2Te5 and N-doped Ge2Sb2Te5N phase-change memory materials can be induced using rapid photo crystallisation with circularly polarised laser light. The new anisotropic phase transition has been confirmed by circular dichroism measurements. This opens up the possibility of controlled induction of optical activity at the nanosecond time scale for exploitation in a new generation of high-density optical memory, fast chiroptical switches and chiral metamaterials.
1-5
Borisenko, Konstantin B.
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Shanmugam, Janaki
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Williams, Benjamin A.O.
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Ewart, Paul
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Gholipour, Behrad
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Hewak, Daniel W.
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Hussain, Rohanah
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Jávorfi, Tamás
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Siligardi, Giuliano
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Kirkland, Angus I.
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Borisenko, Konstantin B.
14a5a6c2-facf-4719-9290-65fdf664d81f
Shanmugam, Janaki
418f0ad3-62c2-436b-8d61-5227d171a52e
Williams, Benjamin A.O.
d5d9ef5a-6ea7-40f8-9123-878dd45be24c
Ewart, Paul
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Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Hussain, Rohanah
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Jávorfi, Tamás
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Siligardi, Giuliano
ebce490a-2faa-4b98-9703-ae0d6f8e46c2
Kirkland, Angus I.
a46d283b-e4f0-4f70-ad02-6c7c1a865086

Borisenko, Konstantin B., Shanmugam, Janaki, Williams, Benjamin A.O., Ewart, Paul, Gholipour, Behrad, Hewak, Daniel W., Hussain, Rohanah, Jávorfi, Tamás, Siligardi, Giuliano and Kirkland, Angus I. (2015) Photo-induced optical activity in phase-change memory materials. Scientific Reports, 5 (8770), 1-5. (doi:10.1038/srep08770).

Record type: Article

Abstract

We demonstrate that optical activity in amorphous isotropic thin films of pure Ge2Sb2Te5 and N-doped Ge2Sb2Te5N phase-change memory materials can be induced using rapid photo crystallisation with circularly polarised laser light. The new anisotropic phase transition has been confirmed by circular dichroism measurements. This opens up the possibility of controlled induction of optical activity at the nanosecond time scale for exploitation in a new generation of high-density optical memory, fast chiroptical switches and chiral metamaterials.

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More information

Accepted/In Press date: 27 January 2015
Published date: 5 March 2015
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 386330
URI: https://eprints.soton.ac.uk/id/eprint/386330
PURE UUID: 078bcb0a-0131-45fc-9379-f28604765a2f
ORCID for Daniel W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 22 Jan 2016 15:38
Last modified: 19 Jul 2019 01:16

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