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Practical operation considerations for memristive integrating sensors

Practical operation considerations for memristive integrating sensors
Practical operation considerations for memristive integrating sensors
The effects of key operating parameter on the practical operation of a recently proposed memristor-based neuronal activity sensor are investigated. A test memristor device is repeatedly subjected to a reference neural recording input signal that has been pre-processed using different settings. The resulting changes in the ability of the device to capture and store neuronal activity as resistive state transitions are assessed. It is found that resistive switching saturation is an important performance limiting factor, combatable by resetting the memristor. Higher desired sensitivity (ability to detect less prominent features in the neural waveform) necessitates more frequent resets.
2322-2325
IEEE
Gupta, I.
11f9ea1a-e38a-45d4-930d-96ac78b3d734
Serb, A.
30f5ec26-f51d-42b3-85fd-0325a27a792c
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Gupta, I.
11f9ea1a-e38a-45d4-930d-96ac78b3d734
Serb, A.
30f5ec26-f51d-42b3-85fd-0325a27a792c
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf

Gupta, I., Serb, A., Khiat, A. and Prodromakis, T. (2016) Practical operation considerations for memristive integrating sensors. In 2016 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE. pp. 2322-2325 . (doi:10.1109/ISCAS.2016.7539049).

Record type: Conference or Workshop Item (Paper)

Abstract

The effects of key operating parameter on the practical operation of a recently proposed memristor-based neuronal activity sensor are investigated. A test memristor device is repeatedly subjected to a reference neural recording input signal that has been pre-processed using different settings. The resulting changes in the ability of the device to capture and store neuronal activity as resistive state transitions are assessed. It is found that resistive switching saturation is an important performance limiting factor, combatable by resetting the memristor. Higher desired sensitivity (ability to detect less prominent features in the neural waveform) necessitates more frequent resets.

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More information

Accepted/In Press date: 2016
e-pub ahead of print date: 11 August 2016
Published date: 11 August 2016
Venue - Dates: IEEE International Symposium in Circuits and Systems, Montreal, Canada, 2016-05-22 - 2016-05-25
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 386363
URI: https://eprints.soton.ac.uk/id/eprint/386363
PURE UUID: aef0ab2f-763c-44fa-a044-523566b1f234
ORCID for T. Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 05 Feb 2016 15:21
Last modified: 03 Dec 2019 01:36

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