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An ultra-low voltage RRAM read-out technique employing dithering principles

An ultra-low voltage RRAM read-out technique employing dithering principles
An ultra-low voltage RRAM read-out technique employing dithering principles
A hardware-friendly, ultra-low voltage read-out technique for multi-level RRAM technologies inspired by the dithering techniques from image processing is proposed and studied. We lay out the fundamental principles behind our adaptation of the approach, present results from hardware tests, carry out sensitivity analysis through simulations in order to study its l imitations. Successful discrimination between a few resistive state levels is shown at a read-out voltage of just 10 mV, thus proving the concept.
Xing, J.
c504f7e4-75f7-4dcc-8aae-cacaa91dc90d
Serb, A.
30f5ec26-f51d-42b3-85fd-0325a27a792c
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Xing, J.
c504f7e4-75f7-4dcc-8aae-cacaa91dc90d
Serb, A.
30f5ec26-f51d-42b3-85fd-0325a27a792c
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf

Xing, J., Serb, A. and Prodromakis, T. (2016) An ultra-low voltage RRAM read-out technique employing dithering principles. IEEE International Symposium in Circuits and Systems, Montreal, Canada. 22 - 25 May 2016. (doi:10.1109/ISCAS.2016.7538870).

Record type: Conference or Workshop Item (Poster)

Abstract

A hardware-friendly, ultra-low voltage read-out technique for multi-level RRAM technologies inspired by the dithering techniques from image processing is proposed and studied. We lay out the fundamental principles behind our adaptation of the approach, present results from hardware tests, carry out sensitivity analysis through simulations in order to study its l imitations. Successful discrimination between a few resistive state levels is shown at a read-out voltage of just 10 mV, thus proving the concept.

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More information

Accepted/In Press date: 2016
Published date: May 2016
Venue - Dates: IEEE International Symposium in Circuits and Systems, Montreal, Canada, 2016-05-22 - 2016-05-25
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 386364
URI: https://eprints.soton.ac.uk/id/eprint/386364
PURE UUID: ae3ea10d-f886-4f5a-809d-4a704583669e
ORCID for T. Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 05 Feb 2016 15:34
Last modified: 20 Jul 2019 00:38

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