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Large gauge factor of hot wire chemical vapour deposition in-situ boron doped polycrystalline silicon

Large gauge factor of hot wire chemical vapour deposition in-situ boron doped polycrystalline silicon
Large gauge factor of hot wire chemical vapour deposition in-situ boron doped polycrystalline silicon
Polysilicon piezoresistors with a large longitudinal gauge factor (GF) of 44 have been achieved using in-situ boron doped hot-wire chemical vapour deposition (HWCVD). This GF is a consequence of a high quality p-type doped polysilicon with a crystal volume of 97% and an average grain size of 150 nm, estimated using Raman spectroscopy and atomic force microscopy (AFM) respectively. The measured minimum Hooge factor associated to the 1/f noise of the polysilicon piezoresistors is 1.4 × 10−3. These results indicate that HWCVD polysilicon is a suitable piezoresistive material for micro-electro-mechanical systems (MEMS) applications.
1-11
Grech, David
8366bdb6-7c29-4537-a41e-7a19370f70aa
Tarazona, Antulio
c6ae87c5-c746-4f89-9ff0-9e7b6874e94f
de Leon, Maria Theresa
bcccad3c-859e-442f-8386-e800eb32fc7a
Kiang, Kian Shen
fdb609c6-75aa-4893-85c8-8e50edfda7fe
Zekonyte, Jurgita
51de4316-3f4b-4a32-864f-fcfe1b510b17
Wood, Robert
d9523d31-41a8-459a-8831-70e29ffe8a73
Chong, Harold M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Grech, David
8366bdb6-7c29-4537-a41e-7a19370f70aa
Tarazona, Antulio
c6ae87c5-c746-4f89-9ff0-9e7b6874e94f
de Leon, Maria Theresa
bcccad3c-859e-442f-8386-e800eb32fc7a
Kiang, Kian Shen
fdb609c6-75aa-4893-85c8-8e50edfda7fe
Zekonyte, Jurgita
51de4316-3f4b-4a32-864f-fcfe1b510b17
Wood, Robert
d9523d31-41a8-459a-8831-70e29ffe8a73
Chong, Harold M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1

Grech, David, Tarazona, Antulio, de Leon, Maria Theresa, Kiang, Kian Shen, Zekonyte, Jurgita, Wood, Robert and Chong, Harold M.H. (2016) Large gauge factor of hot wire chemical vapour deposition in-situ boron doped polycrystalline silicon. Materials Research Express, 3 (4), 1-11, [045702]. (doi:10.1088/2053-1591/3/4/045702).

Record type: Article

Abstract

Polysilicon piezoresistors with a large longitudinal gauge factor (GF) of 44 have been achieved using in-situ boron doped hot-wire chemical vapour deposition (HWCVD). This GF is a consequence of a high quality p-type doped polysilicon with a crystal volume of 97% and an average grain size of 150 nm, estimated using Raman spectroscopy and atomic force microscopy (AFM) respectively. The measured minimum Hooge factor associated to the 1/f noise of the polysilicon piezoresistors is 1.4 × 10−3. These results indicate that HWCVD polysilicon is a suitable piezoresistive material for micro-electro-mechanical systems (MEMS) applications.

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More information

Accepted/In Press date: 27 January 2016
e-pub ahead of print date: 21 April 2016
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 386725
URI: http://eprints.soton.ac.uk/id/eprint/386725
PURE UUID: 28cc8b09-996a-4997-8137-de4c6656b4dd
ORCID for Kian Shen Kiang: ORCID iD orcid.org/0000-0002-7326-909X
ORCID for Robert Wood: ORCID iD orcid.org/0000-0003-0681-9239
ORCID for Harold M.H. Chong: ORCID iD orcid.org/0000-0002-7110-5761

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Date deposited: 30 Jan 2016 14:10
Last modified: 18 Feb 2021 17:10

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Contributors

Author: David Grech
Author: Antulio Tarazona
Author: Maria Theresa de Leon
Author: Kian Shen Kiang ORCID iD
Author: Jurgita Zekonyte
Author: Robert Wood ORCID iD
Author: Harold M.H. Chong ORCID iD

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