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Novel electro-absorption modulator with germanium fins evanescently coupled to silicon waveguide

Novel electro-absorption modulator with germanium fins evanescently coupled to silicon waveguide
Novel electro-absorption modulator with germanium fins evanescently coupled to silicon waveguide
Electro-Absorption (EA) modulator is a promising candidate for the next generation devices in Si photonics with even lower power consumptions for short-reach optical interconnections. However, its relatively higher insertion loss must be addressed, and the efficient coupling from a Si waveguide to EA modulator is a challenging topic. Here, we propose, for the first time, to use novel Ge fin structures for EA modulators. An array of Ge fins evanescently coupled to a Si waveguide is used for the modulation by the Franz-Keldysh effect (FKE). We have designed this new EA modulator using Ge fins based on simulations.
Electro-absorption, absorption, Modulator, Evanescent, Silicon, Si, Waveguide, Ge, Germanium, Fin
Jiang, Zhiyuan
b140b0ff-e7a6-4c36-b808-f798fd466795
Debnath, Kapil
aa01749d-524b-4464-b90a-af072e92a02f
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Jiang, Zhiyuan
b140b0ff-e7a6-4c36-b808-f798fd466795
Debnath, Kapil
aa01749d-524b-4464-b90a-af072e92a02f
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc

Jiang, Zhiyuan, Debnath, Kapil, Reed, Graham and Saito, Shinichi (2016) Novel electro-absorption modulator with germanium fins evanescently coupled to silicon waveguide. MRS Spring Meeting, United States. (In Press)

Record type: Conference or Workshop Item (Paper)

Abstract

Electro-Absorption (EA) modulator is a promising candidate for the next generation devices in Si photonics with even lower power consumptions for short-reach optical interconnections. However, its relatively higher insertion loss must be addressed, and the efficient coupling from a Si waveguide to EA modulator is a challenging topic. Here, we propose, for the first time, to use novel Ge fin structures for EA modulators. An array of Ge fins evanescently coupled to a Si waveguide is used for the modulation by the Franz-Keldysh effect (FKE). We have designed this new EA modulator using Ge fins based on simulations.

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More information

Accepted/In Press date: 12 January 2016
Venue - Dates: MRS Spring Meeting, United States, 2016-01-12
Keywords: Electro-absorption, absorption, Modulator, Evanescent, Silicon, Si, Waveguide, Ge, Germanium, Fin
Organisations: Optoelectronics Research Centre, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 387909
URI: https://eprints.soton.ac.uk/id/eprint/387909
PURE UUID: c65c7f5a-24b1-4d45-afe4-2a76b784fdf1
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 16 Feb 2016 16:41
Last modified: 31 Jul 2019 00:35

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Contributors

Author: Zhiyuan Jiang
Author: Kapil Debnath
Author: Graham Reed
Author: Shinichi Saito ORCID iD

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