Dual-gate polysilicon nanoribbon biosensors enable high sensitivity detection of proteins
Dual-gate polysilicon nanoribbon biosensors enable high sensitivity detection of proteins
We demonstrate the advantages of dual-gate polysilicon nanoribbon biosensors with a comprehensive evaluation of different measurement schemes for pH and protein sensing. In particular, we compare the detection of voltage and current changes when top- and bottom-gate bias is applied. Measurements of pH show that a large voltage shift of 491 mV pH-1 is obtained in the subthreshold region when the top-gate is kept at a fixed potential and the bottom-gate is varied (voltage sweep). This is an improvement of 16 times over the 30 mV pH-1 measured using a top-gate sweep with the bottom-gate at a fixed potential. A similar large voltage shift of 175 mV is obtained when the protein avidin is sensed using a bottom-gate sweep. This is an improvement of 20 times compared with the 8.8 mV achieved from a top-gate sweep. Current measurements using bottom-gate sweeps do not deliver the same signal amplification as when using bottom-gate sweeps to measure voltage shifts. Thus, for detecting a small signal change on protein binding, it is advantageous to employ a double-gate transistor and to measure a voltage shift using a bottom-gate sweep. For top-gate sweeps, the use of a dual-gate transistor enables the current sensitivity to be enhanced by applying a negative bias to the bottom-gate to reduce the carrier concentration in the nanoribbon. For pH measurements, the current sensitivity increases from 65% to 149% and for avidin sensing it increases from 1.4% to 2.5%.
Zeimpekis, I.
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Sun, K.
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Hu, C.
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Ditshego, N.M.J.
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Thomas, O.
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de Planque, M.R.R.
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Chong, H.M.H.
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Morgan, H.
de00d59f-a5a2-48c4-a99a-1d5dd7854174
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
8 March 2016
Zeimpekis, I.
a2c354ec-3891-497c-adac-89b3a5d96af0
Sun, K.
b7c648a3-7be8-4613-9d4d-1bf937fb487b
Hu, C.
4892b566-6809-42a8-8285-1c1e93aac730
Ditshego, N.M.J.
60dbad8f-c435-4f1d-a725-17a13b072796
Thomas, O.
2eb3052c-6c49-4ae9-8734-8f48027fe912
de Planque, M.R.R.
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Morgan, H.
de00d59f-a5a2-48c4-a99a-1d5dd7854174
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Zeimpekis, I., Sun, K., Hu, C., Ditshego, N.M.J., Thomas, O., de Planque, M.R.R., Chong, H.M.H., Morgan, H. and Ashburn, P.
(2016)
Dual-gate polysilicon nanoribbon biosensors enable high sensitivity detection of proteins.
Nanotechnology, 27 (16), [165502].
(doi:10.1088/0957-4484/27/16/165502).
Abstract
We demonstrate the advantages of dual-gate polysilicon nanoribbon biosensors with a comprehensive evaluation of different measurement schemes for pH and protein sensing. In particular, we compare the detection of voltage and current changes when top- and bottom-gate bias is applied. Measurements of pH show that a large voltage shift of 491 mV pH-1 is obtained in the subthreshold region when the top-gate is kept at a fixed potential and the bottom-gate is varied (voltage sweep). This is an improvement of 16 times over the 30 mV pH-1 measured using a top-gate sweep with the bottom-gate at a fixed potential. A similar large voltage shift of 175 mV is obtained when the protein avidin is sensed using a bottom-gate sweep. This is an improvement of 20 times compared with the 8.8 mV achieved from a top-gate sweep. Current measurements using bottom-gate sweeps do not deliver the same signal amplification as when using bottom-gate sweeps to measure voltage shifts. Thus, for detecting a small signal change on protein binding, it is advantageous to employ a double-gate transistor and to measure a voltage shift using a bottom-gate sweep. For top-gate sweeps, the use of a dual-gate transistor enables the current sensitivity to be enhanced by applying a negative bias to the bottom-gate to reduce the carrier concentration in the nanoribbon. For pH measurements, the current sensitivity increases from 65% to 149% and for avidin sensing it increases from 1.4% to 2.5%.
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Ioannis_Zeimpekis_Accepted_Manuscript.pdf
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Accepted/In Press date: 18 February 2016
e-pub ahead of print date: 8 March 2016
Published date: 8 March 2016
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 388330
URI: http://eprints.soton.ac.uk/id/eprint/388330
ISSN: 0957-4484
PURE UUID: 6f2b42a9-dfc6-44a1-80ba-7baf20fa7540
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Date deposited: 23 Feb 2016 16:53
Last modified: 21 Sep 2024 04:01
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Contributors
Author:
C. Hu
Author:
N.M.J. Ditshego
Author:
O. Thomas
Author:
M.R.R. de Planque
Author:
H.M.H. Chong
Author:
H. Morgan
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