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CVD-grown tin sulphide thin films for photovoltaic applications

CVD-grown tin sulphide thin films for photovoltaic applications
CVD-grown tin sulphide thin films for photovoltaic applications
The search for new materials suitable for photovoltaic (PV) devices needs to satisfy many requirements such as the ability to synthesize by a wide range of methods for mass production using non vacuum and simple techniques. Tin sulfide is being widely investigated as a material that can be utilized in PV devices. However, conversion efficiency of SnS devices is still low, a theoretical efficiency of 32% and an experimental efficiency of 4.36% [1],[2]. This poor performance may be related to several issues such as device architecture, low quality of material and other [3]. Amorphous phase Sn-S thin films were fabricated by APCVD at room temperature using SnCl4 precursor to react with H2S gas. Phase Engineering of Sn-S thin films were investigated by annealing these films in a range of temperatures with controlled atmosphere. We address the second issue in this study investigating the effect of annealing temperatures on the stoichiometry and phases of the SnS thin films by a series of characterizations including SEM, EDX, Raman, XRD and UV-VIS-NIR. A scalable and controllable Sn-S phase engineering have been demonstrated and the results are very promising for PV applications.
Alzaidy, Ghadah
2d39b828-3eb4-4d96-85e6-d436a2b71435
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Hewak, Daniel
87c80070-c101-4f7a-914f-4cc3131e3db0
Alzaidy, Ghadah
2d39b828-3eb4-4d96-85e6-d436a2b71435
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Hewak, Daniel
87c80070-c101-4f7a-914f-4cc3131e3db0

Alzaidy, Ghadah, Huang, Chung-Che and Hewak, Daniel (2016) CVD-grown tin sulphide thin films for photovoltaic applications. The 9th Saudi Student Conference, United Kingdom. 13 - 14 Feb 2016. 1 pp .

Record type: Conference or Workshop Item (Poster)

Abstract

The search for new materials suitable for photovoltaic (PV) devices needs to satisfy many requirements such as the ability to synthesize by a wide range of methods for mass production using non vacuum and simple techniques. Tin sulfide is being widely investigated as a material that can be utilized in PV devices. However, conversion efficiency of SnS devices is still low, a theoretical efficiency of 32% and an experimental efficiency of 4.36% [1],[2]. This poor performance may be related to several issues such as device architecture, low quality of material and other [3]. Amorphous phase Sn-S thin films were fabricated by APCVD at room temperature using SnCl4 precursor to react with H2S gas. Phase Engineering of Sn-S thin films were investigated by annealing these films in a range of temperatures with controlled atmosphere. We address the second issue in this study investigating the effect of annealing temperatures on the stoichiometry and phases of the SnS thin films by a series of characterizations including SEM, EDX, Raman, XRD and UV-VIS-NIR. A scalable and controllable Sn-S phase engineering have been demonstrated and the results are very promising for PV applications.

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More information

Published date: 13 February 2016
Venue - Dates: The 9th Saudi Student Conference, United Kingdom, 2016-02-13 - 2016-02-14
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 388635
URI: http://eprints.soton.ac.uk/id/eprint/388635
PURE UUID: 6c8948c4-90f1-47d6-ae62-de574ea273ee
ORCID for Chung-Che Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for Daniel Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 02 Mar 2016 15:20
Last modified: 09 Oct 2018 00:36

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