Large-scale nanoelectromechanical switches based on directly deposited nanocrystalline graphene on insulating substrates
Large-scale nanoelectromechanical switches based on directly deposited nanocrystalline graphene on insulating substrates
The direct growth of graphene on insulating substrate is highly desirable for the commercial scale integration of graphene due to the potential lower cost and better process control. We report a simple, direct deposition of nanocrystalline graphene (NCG) on insulating substrates via catalyst-free plasma-enhanced chemical vapor deposition at relatively low temperature of ~800 °C. The parametric study of the process conditions that we conducted reveals the deposition mechanism and allows us to grow high quality films. Based on such film, we demonstrate the fabrication of a large-scale array of nanoelectromechanical (NEM) switches using regular thin film process techniques, with no transfer required. Thanks to ultra-low thickness, good uniformity, and high Young's modulus of ~0.86 TPa, NCG is considered as a promising material for high performance NEM devices. The high performance is highlighted for the NCG switches, e.g. low pull-in voltage <3 V, reversible operations, minimal leakage current of ~1 pA, and high on/off ratio of ~105.
6659-6665
Sun, Jian
bd3cd7a6-ce5d-4a71-bfaa-c1d295321354
Schmidt, Marek E.
e4489af8-f4ff-4e8d-b7d2-8ca34cb51445
Muruganathan, Manoharan
aea19fd9-4744-4eda-b43b-50d84bf21185
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
1 March 2016
Sun, Jian
bd3cd7a6-ce5d-4a71-bfaa-c1d295321354
Schmidt, Marek E.
e4489af8-f4ff-4e8d-b7d2-8ca34cb51445
Muruganathan, Manoharan
aea19fd9-4744-4eda-b43b-50d84bf21185
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Sun, Jian, Schmidt, Marek E., Muruganathan, Manoharan, Chong, Harold and Mizuta, Hiroshi
(2016)
Large-scale nanoelectromechanical switches based on directly deposited nanocrystalline graphene on insulating substrates.
Nanoscale, 8 (12), .
(doi:10.1039/C6NR00253F).
Abstract
The direct growth of graphene on insulating substrate is highly desirable for the commercial scale integration of graphene due to the potential lower cost and better process control. We report a simple, direct deposition of nanocrystalline graphene (NCG) on insulating substrates via catalyst-free plasma-enhanced chemical vapor deposition at relatively low temperature of ~800 °C. The parametric study of the process conditions that we conducted reveals the deposition mechanism and allows us to grow high quality films. Based on such film, we demonstrate the fabrication of a large-scale array of nanoelectromechanical (NEM) switches using regular thin film process techniques, with no transfer required. Thanks to ultra-low thickness, good uniformity, and high Young's modulus of ~0.86 TPa, NCG is considered as a promising material for high performance NEM devices. The high performance is highlighted for the NCG switches, e.g. low pull-in voltage <3 V, reversible operations, minimal leakage current of ~1 pA, and high on/off ratio of ~105.
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Accepted/In Press date: 27 February 2016
e-pub ahead of print date: 2016
Published date: 1 March 2016
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 388821
URI: http://eprints.soton.ac.uk/id/eprint/388821
ISSN: 2040-3364
PURE UUID: 6053855e-206f-4324-9e1f-f4376b804738
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Date deposited: 03 Mar 2016 11:08
Last modified: 15 Mar 2024 03:30
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Contributors
Author:
Jian Sun
Author:
Marek E. Schmidt
Author:
Manoharan Muruganathan
Author:
Harold Chong
Author:
Hiroshi Mizuta
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