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Helium ion beam lithography on fullerene molecular resists for sub-10 nm patterning

Helium ion beam lithography on fullerene molecular resists for sub-10 nm patterning
Helium ion beam lithography on fullerene molecular resists for sub-10 nm patterning
Helium ion beam lithography (HIBL) is an emerging technique that uses a sub-nanometre focused beam of helium ions generated in the helium ion microscope to expose resist. It benefits from high resolution, high sensitivity and a low proximity effect. Here we present an investigation into HIBL on a novel, negative tone fullerene-derivative molecular resist. Analysis of large area exposures reveals a sensitivity of ~40 µC/cm2 with a 30 keV helium beam which is almost three orders of magnitude higher than the sensitivity of this resist to a 30 keV electron beam. Sparse line features with line widths of 7.3 nm are achieved on the ~10 nm thick resist. The fabrication of 8.5 half-pitched lines with good feature separation and 6 nm half-pitched lines with inferior but still resolvable separation is also shown in this study. Thus, sub-10 nm patterning with small proximity effect is demonstrated using HIBL using standard processing conditions, establishing its potential as an alternative to EBL for rapid prototyping of beyond CMOS devices.
helium ion beam lithography, helium ion microscope, fullerene, molecular resist, nanolithography, next-generation lithography
0167-9317
1-5
Shi, Xiaoqing
004139e0-0381-40c5-a407-ea9865fd3c7a
Prewett, Philip
6a3a966f-5dd0-43d0-8a51-6a5f78e56b1a
Huq, Ejaz
6ba52b03-395d-4361-96b0-5f0d9d7eb746
Bagnall, Darren
1a8b883e-866b-43a3-a1b8-0eb41532b775
Robinson, Alex
f00df480-fa9e-45ad-b05f-a1f9b0c2a4f9
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Shi, Xiaoqing
004139e0-0381-40c5-a407-ea9865fd3c7a
Prewett, Philip
6a3a966f-5dd0-43d0-8a51-6a5f78e56b1a
Huq, Ejaz
6ba52b03-395d-4361-96b0-5f0d9d7eb746
Bagnall, Darren
1a8b883e-866b-43a3-a1b8-0eb41532b775
Robinson, Alex
f00df480-fa9e-45ad-b05f-a1f9b0c2a4f9
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8

Shi, Xiaoqing, Prewett, Philip, Huq, Ejaz, Bagnall, Darren, Robinson, Alex and Boden, Stuart (2016) Helium ion beam lithography on fullerene molecular resists for sub-10 nm patterning. Microelectronic Engineering, 1-5. (doi:10.1016/j.mee.2016.02.045).

Record type: Article

Abstract

Helium ion beam lithography (HIBL) is an emerging technique that uses a sub-nanometre focused beam of helium ions generated in the helium ion microscope to expose resist. It benefits from high resolution, high sensitivity and a low proximity effect. Here we present an investigation into HIBL on a novel, negative tone fullerene-derivative molecular resist. Analysis of large area exposures reveals a sensitivity of ~40 µC/cm2 with a 30 keV helium beam which is almost three orders of magnitude higher than the sensitivity of this resist to a 30 keV electron beam. Sparse line features with line widths of 7.3 nm are achieved on the ~10 nm thick resist. The fabrication of 8.5 half-pitched lines with good feature separation and 6 nm half-pitched lines with inferior but still resolvable separation is also shown in this study. Thus, sub-10 nm patterning with small proximity effect is demonstrated using HIBL using standard processing conditions, establishing its potential as an alternative to EBL for rapid prototyping of beyond CMOS devices.

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More information

Accepted/In Press date: 18 February 2016
e-pub ahead of print date: 26 February 2016
Additional Information: Funded by EU: Single Nanometer Manufacturing for beyond CMOS devices (SNM) (318804)
Keywords: helium ion beam lithography, helium ion microscope, fullerene, molecular resist, nanolithography, next-generation lithography
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 388824
URI: https://eprints.soton.ac.uk/id/eprint/388824
ISSN: 0167-9317
PURE UUID: 11787c34-7343-4e37-bb42-f071699959ab
ORCID for Stuart Boden: ORCID iD orcid.org/0000-0002-4232-1828

Catalogue record

Date deposited: 04 Mar 2016 11:24
Last modified: 06 Jun 2018 12:43

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Contributors

Author: Xiaoqing Shi
Author: Philip Prewett
Author: Ejaz Huq
Author: Darren Bagnall
Author: Alex Robinson
Author: Stuart Boden ORCID iD

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