Effects of surface passivation on top-down ZnO nanowire transistors
Effects of surface passivation on top-down ZnO nanowire transistors
We fabricated unpassivated and passivated zinc oxide (ZnO) nanowire field effect transistors (NWFETs) using conventional top-down method of remote plasma atomic layer deposition and anisotropic dry etch. This paper investigates the effect of Al2O3 passivation on the electrical characteristics of the ZnO NWFETs. Measured unpassivated ZnO NWFETs show a threshold voltage of 6.5 V, drain current on/off ratio of 106 and field effect mobility of 31.4 cm2/V s. Passivated ZnO NWFETs demonstrate threshold voltage shift to -10 V, drain current on/off ratio of 104 and improvement of mobility of 35.5 cm2/V s. The passivated device results indicate suitability for biosensing applications.
depletion mod, field effect transistor, nanowire, remote plasma atomic layer deposition (rpald), passivation, zno
91-95
Ditshego, N.M.J.
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Sun, K.
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Zeimpekis, I.
a2c354ec-3891-497c-adac-89b3a5d96af0
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
de Planque, M.R.R.
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
1 September 2015
Ditshego, N.M.J.
4f543bd6-5bdd-4618-82e1-f6830bada12c
Sun, K.
0d89e1b1-78c6-44af-94aa-e9742efe28ad
Zeimpekis, I.
a2c354ec-3891-497c-adac-89b3a5d96af0
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
de Planque, M.R.R.
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Ditshego, N.M.J., Sun, K., Zeimpekis, I., Ashburn, P., de Planque, M.R.R. and Chong, H.M.H.
(2015)
Effects of surface passivation on top-down ZnO nanowire transistors.
Microelectronic Engineering, 145, .
(doi:10.1016/j.mee.2015.03.013).
Abstract
We fabricated unpassivated and passivated zinc oxide (ZnO) nanowire field effect transistors (NWFETs) using conventional top-down method of remote plasma atomic layer deposition and anisotropic dry etch. This paper investigates the effect of Al2O3 passivation on the electrical characteristics of the ZnO NWFETs. Measured unpassivated ZnO NWFETs show a threshold voltage of 6.5 V, drain current on/off ratio of 106 and field effect mobility of 31.4 cm2/V s. Passivated ZnO NWFETs demonstrate threshold voltage shift to -10 V, drain current on/off ratio of 104 and improvement of mobility of 35.5 cm2/V s. The passivated device results indicate suitability for biosensing applications.
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Submitted date: 29 October 2014
Accepted/In Press date: 10 March 2015
e-pub ahead of print date: 20 March 2015
Published date: 1 September 2015
Keywords:
depletion mod, field effect transistor, nanowire, remote plasma atomic layer deposition (rpald), passivation, zno
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 389688
URI: http://eprints.soton.ac.uk/id/eprint/389688
ISSN: 0167-9317
PURE UUID: 5443c16d-1ac4-4075-961a-e84d40fdae9b
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Date deposited: 14 Mar 2016 09:35
Last modified: 21 Sep 2024 01:46
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Contributors
Author:
N.M.J. Ditshego
Author:
K. Sun
Author:
M.R.R. de Planque
Author:
H.M.H. Chong
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