Advanced CVD technology for emerging transition metal di-chalcogenides
Advanced CVD technology for emerging transition metal di-chalcogenides
Transition metal di-chalcogenides (TMDCs) such as MoS2, MoSe2, WS2 and WSe2 have become a noteworthy complimentary material to graphene sharing many of its properties. They may however offer properties that are unattainable in graphene since TMDCs offer a tunable bandgap through both composition and number of layers. This has led to use of TMDCs in applications such as transistors, photodetectors, electroluminescent and bio-sensing devices. In addition, chalcogenide thin films such as CuInGaSe2 and CdTe have been commercialized for photovoltaic application, however the search for low cost, non-toxic and earth abundant high efficiency absorbing materials remains under investigation. Sn-S, a p-type semiconductor with a band gap of ~1.3 eV and the sort after aforementioned properties, has attracted great interest recently. Chemical vapour deposition (CVD) technology has the advantage of offering conformal, scalable, and controllable thin film growth on a variety of different substrates. In this talk we describe our recent development in TMDCs materials using CVD technology and discuss their potential applications.
Huang, Chung-Che
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Aspiotis, Nikolaos
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Alzaidy, Ghadah
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Cui, Qingsong
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Weatherby, Ed
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Morgan, Katrina
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Hewak, Dan
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30 March 2016
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Aspiotis, Nikolaos
b32d40f9-0496-464e-bfcc-217f57ca9dc3
Alzaidy, Ghadah
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Cui, Qingsong
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Weatherby, Ed
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Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Hewak, Dan
87c80070-c101-4f7a-914f-4cc3131e3db0
Huang, Chung-Che, Aspiotis, Nikolaos, Alzaidy, Ghadah, Cui, Qingsong, Weatherby, Ed, Morgan, Katrina and Hewak, Dan
(2016)
Advanced CVD technology for emerging transition metal di-chalcogenides.
Workshop on Two-Dimensional Transition Metal Dichalcogenides Materials and Photovoltaic Devices, Brasilia, Brazil.
29 - 31 Mar 2016.
Record type:
Conference or Workshop Item
(Other)
Abstract
Transition metal di-chalcogenides (TMDCs) such as MoS2, MoSe2, WS2 and WSe2 have become a noteworthy complimentary material to graphene sharing many of its properties. They may however offer properties that are unattainable in graphene since TMDCs offer a tunable bandgap through both composition and number of layers. This has led to use of TMDCs in applications such as transistors, photodetectors, electroluminescent and bio-sensing devices. In addition, chalcogenide thin films such as CuInGaSe2 and CdTe have been commercialized for photovoltaic application, however the search for low cost, non-toxic and earth abundant high efficiency absorbing materials remains under investigation. Sn-S, a p-type semiconductor with a band gap of ~1.3 eV and the sort after aforementioned properties, has attracted great interest recently. Chemical vapour deposition (CVD) technology has the advantage of offering conformal, scalable, and controllable thin film growth on a variety of different substrates. In this talk we describe our recent development in TMDCs materials using CVD technology and discuss their potential applications.
Text
Abstract_Kevin Chung-Che Huang.pdf
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Published date: 30 March 2016
Venue - Dates:
Workshop on Two-Dimensional Transition Metal Dichalcogenides Materials and Photovoltaic Devices, Brasilia, Brazil, 2016-03-29 - 2016-03-31
Organisations:
Optoelectronics Research Centre
Identifiers
Local EPrints ID: 389840
URI: http://eprints.soton.ac.uk/id/eprint/389840
PURE UUID: 9627bdfd-12f6-4958-ac78-63bb15082ba7
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Date deposited: 16 Mar 2016 11:53
Last modified: 15 Mar 2024 03:37
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Contributors
Author:
Chung-Che Huang
Author:
Nikolaos Aspiotis
Author:
Ghadah Alzaidy
Author:
Qingsong Cui
Author:
Ed Weatherby
Author:
Katrina Morgan
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