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Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of buffer layer and methyltrichlorosilane addition

Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of buffer layer and methyltrichlorosilane addition
Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of buffer layer and methyltrichlorosilane addition
3C-SiC layers were deposited on Si substrates by using a low temperature buffer layer and the addition of methyl trichloro silane (MTS) to the gas phase during the high temperature thick film growth. Several samples were grown by varying the deposition temperature and the MTS content in order to study how these parameters affect the layer quality and the lattice defects. All of the grown layers are single crystalline and epitaxial to the substrate. The formation of empty voids at the SiC/Si interface was successfully avoided. The surface of the layers grown with MTS addition was smoother and contained less residual strain. A 15 ?m thick 3C-SiC sample was grown with an optimized process in order to evaluate its residual strain and bow.
1466-8033
2770-2779
Bosi, M.
34b167cc-cdf6-437f-9cd2-91cfd9159b06
Attolini, G.
b9fce06d-caed-4afd-afeb-4e52da704afd
Negri, M.
c7aa3645-ab7c-462d-a995-9dbe587ab417
Ferrari, C.
40cd22e5-0daf-43d5-b62f-8dfc236ea30f
Buffagni, E.
c2da6342-a994-4a3a-937e-d2aaaed641a3
Frigeri, C.
09bb642c-84d5-4818-94b0-c52b863bda54
Calicchio, M.
57d63b86-47c7-4be2-8a44-c8f6e1082e16
Pécz, B.
e32c346a-6b6b-4359-8115-1f35371a9efb
Riesz, F.
3034d963-93dc-41a7-bc1b-94f828d8e0bd
Cora, I.
4994abbd-2dc7-44e4-b78a-a4ae4529ad03
Osvath, Z.
2894e63c-3c46-498d-8074-7751b1e5ca33
Jiang, L.
374f2414-51f0-418f-a316-e7db0d6dc4d1
Borionetti, G.
e7dea9a1-7961-447c-8b82-71628b818060
Bosi, M.
34b167cc-cdf6-437f-9cd2-91cfd9159b06
Attolini, G.
b9fce06d-caed-4afd-afeb-4e52da704afd
Negri, M.
c7aa3645-ab7c-462d-a995-9dbe587ab417
Ferrari, C.
40cd22e5-0daf-43d5-b62f-8dfc236ea30f
Buffagni, E.
c2da6342-a994-4a3a-937e-d2aaaed641a3
Frigeri, C.
09bb642c-84d5-4818-94b0-c52b863bda54
Calicchio, M.
57d63b86-47c7-4be2-8a44-c8f6e1082e16
Pécz, B.
e32c346a-6b6b-4359-8115-1f35371a9efb
Riesz, F.
3034d963-93dc-41a7-bc1b-94f828d8e0bd
Cora, I.
4994abbd-2dc7-44e4-b78a-a4ae4529ad03
Osvath, Z.
2894e63c-3c46-498d-8074-7751b1e5ca33
Jiang, L.
374f2414-51f0-418f-a316-e7db0d6dc4d1
Borionetti, G.
e7dea9a1-7961-447c-8b82-71628b818060

Bosi, M., Attolini, G., Negri, M., Ferrari, C., Buffagni, E., Frigeri, C., Calicchio, M., Pécz, B., Riesz, F., Cora, I., Osvath, Z., Jiang, L. and Borionetti, G. (2016) Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of buffer layer and methyltrichlorosilane addition. CrystEngComm, 18, 2770-2779. (doi:10.1039/C6CE00280C).

Record type: Article

Abstract

3C-SiC layers were deposited on Si substrates by using a low temperature buffer layer and the addition of methyl trichloro silane (MTS) to the gas phase during the high temperature thick film growth. Several samples were grown by varying the deposition temperature and the MTS content in order to study how these parameters affect the layer quality and the lattice defects. All of the grown layers are single crystalline and epitaxial to the substrate. The formation of empty voids at the SiC/Si interface was successfully avoided. The surface of the layers grown with MTS addition was smoother and contained less residual strain. A 15 ?m thick 3C-SiC sample was grown with an optimized process in order to evaluate its residual strain and bow.

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Accepted/In Press date: 9 March 2016
e-pub ahead of print date: 10 March 2016
Organisations: Engineering Mats & Surface Engineerg Gp

Identifiers

Local EPrints ID: 390300
URI: https://eprints.soton.ac.uk/id/eprint/390300
ISSN: 1466-8033
PURE UUID: 2854a2bc-af9c-4b1d-8f7b-f293cb98a4ef
ORCID for L. Jiang: ORCID iD orcid.org/0000-0002-3400-825X

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Date deposited: 23 Mar 2016 11:30
Last modified: 06 Jun 2018 12:41

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