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Microstructure and electrical properties of co-sputtered Cu embedded amorphous SiC

Microstructure and electrical properties of co-sputtered Cu embedded amorphous SiC
Microstructure and electrical properties of co-sputtered Cu embedded amorphous SiC
The properties of co-sputtered Cu embedded amorphous SiC were studied. The effect of the microstructure features on the electrical conduction of the SiC films, with Cu volume% between 0% and 57%, was analysed by temperature dependent measurements, along with an effective-medium approximation model. The electrical conduction in Cu embedded amorphous SiC, was attributed to the tunnelling mechanism. Dielectric constants of the Cu embedded amorphous SiC composites were measured from purposely fabricated micro-capacitors using Cu embedded amorphous SiC composites as the dielectric layer, showing a decrease in dielectric constant with increasing Cu volume%. The electrical contacts between metal electrodes, i.e. Cu and Au, and Cu embedded amorphous SiC composites resulted in Schottky emission.
amorphous SiC, copper nanoparticles, co-sputter, schottky emission.
0167-577X
60-63
Fan, Junqing
0ca2fd5e-6520-47f8-9bfc-289c313a04cb
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
Gowers, Robert P.
35716eae-8c54-4dcf-800d-a08c6382dd1e
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Fan, Junqing
0ca2fd5e-6520-47f8-9bfc-289c313a04cb
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
Gowers, Robert P.
35716eae-8c54-4dcf-800d-a08c6382dd1e
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c

Fan, Junqing, Jiang, Liudi, Zhong, Le, Gowers, Robert P., Morgan, Katrina and de Groot, C.H. (2016) Microstructure and electrical properties of co-sputtered Cu embedded amorphous SiC. Materials Letters, 178, 60-63. (doi:10.1016/j.matlet.2016.04.144).

Record type: Article

Abstract

The properties of co-sputtered Cu embedded amorphous SiC were studied. The effect of the microstructure features on the electrical conduction of the SiC films, with Cu volume% between 0% and 57%, was analysed by temperature dependent measurements, along with an effective-medium approximation model. The electrical conduction in Cu embedded amorphous SiC, was attributed to the tunnelling mechanism. Dielectric constants of the Cu embedded amorphous SiC composites were measured from purposely fabricated micro-capacitors using Cu embedded amorphous SiC composites as the dielectric layer, showing a decrease in dielectric constant with increasing Cu volume%. The electrical contacts between metal electrodes, i.e. Cu and Au, and Cu embedded amorphous SiC composites resulted in Schottky emission.

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Accepted/In Press date: 17 April 2016
e-pub ahead of print date: 23 April 2016
Published date: 1 September 2016
Keywords: amorphous SiC, copper nanoparticles, co-sputter, schottky emission.
Organisations: Optoelectronics Research Centre, Engineering Mats & Surface Engineerg Gp, Nanoelectronics and Nanotechnology, Engineering Sciences

Identifiers

Local EPrints ID: 393202
URI: http://eprints.soton.ac.uk/id/eprint/393202
ISSN: 0167-577X
PURE UUID: af87654f-5bb1-4f0d-ad16-70de89869320
ORCID for Liudi Jiang: ORCID iD orcid.org/0000-0002-3400-825X
ORCID for Katrina Morgan: ORCID iD orcid.org/0000-0002-8600-4322
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 22 Apr 2016 12:32
Last modified: 07 Oct 2020 06:02

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Contributors

Author: Junqing Fan
Author: Liudi Jiang ORCID iD
Author: Le Zhong
Author: Robert P. Gowers
Author: Katrina Morgan ORCID iD
Author: C.H. de Groot ORCID iD

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